Analysis of dependence of resonant tun-neling on static positive parameters in a single-negative bilayer

W. H. Lin, Chien-Jang Wu, T. J. Yang, S. J. Chang

    Research output: Contribution to journalArticle

    5 Citations (Scopus)

    Abstract

    It is known that electromagnetic resonant tunneling phenomenon can be found in the single-negative (SNG) bilayer, a two-layer coating made of the epsilon-negative (ENG) and the mu-negative (MNG) media. In this work, we report that this resonant tunneling is strongly dependent on the static positive parameters in SNG materials. The values of the static permeability in ENG layer and the static permittivity in MNG layer for obtaining the resonant tunneling are theoretically analyzed and discussed for two possible cases of equal-and unequal-thicknesses. Useful design guidelines in selecting positive parameters for the resonant tunneling are obtained. We also investigate the possible influence in the resonant tunneling due to the losses from the ENG and MNG materials. Additionally, we examine the polarization-dependent resonant tunneling, that is, the dependence of angle of incidence is examined.

    Original languageEnglish
    Pages (from-to)151-165
    Number of pages15
    JournalProgress in Electromagnetics Research
    Volume118
    DOIs
    Publication statusPublished - 2011 Jan 1

    Fingerprint

    Resonant tunneling
    resonant tunneling
    permeability
    Permittivity
    incidence
    Polarization
    permittivity
    electromagnetism
    coatings
    Coatings
    polarization

    ASJC Scopus subject areas

    • Radiation
    • Condensed Matter Physics
    • Electrical and Electronic Engineering

    Cite this

    Analysis of dependence of resonant tun-neling on static positive parameters in a single-negative bilayer. / Lin, W. H.; Wu, Chien-Jang; Yang, T. J.; Chang, S. J.

    In: Progress in Electromagnetics Research, Vol. 118, 01.01.2011, p. 151-165.

    Research output: Contribution to journalArticle

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