Analysis of a new 33-58-GHz doubly balanced drain mixer in 90-nm CMOS technology

Hong Yuan Yang*, Jeng Han Tsai, Tian Wei Huang, Huei Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


A new doubly balanced drain-pumped topology for CMOS passive mixer design is proposed in this paper. In the efforts to improve the conversion loss of passive balanced mixers, the CMOS drain-pumped topology is employed. In addition, the doubly balanced architecture with the advantages of good port-to-port isolations has been combined with the CMOS drain mixer design. For the broad bandwidth and the flatness of the conversion loss, a wideband matching technique using a broadband Marchand balun network is analyzed and successfully implemented in the mixer design. This mixer is fabricated in standard 90-nm CMOS technology. According to experiment results, the mixer has a measured conversion loss of 7.5 ± 1.5 dB from 33 to 58 GHz. Based on the double-balanced architecture, the local oscillator (LO)-to-RF and LO-to-IF isolations are better than 42.7 and 51.5 dB, respectively. The mixer consumes zero dc power with a compact size of 0.55 × 0.52 mm 2. To the best of our knowledge, this paper presents the first CMOS drain mixer using doubly balanced topology.

Original languageEnglish
Article number6142126
Pages (from-to)1057-1068
Number of pages12
JournalIEEE Transactions on Microwave Theory and Techniques
Issue number4
Publication statusPublished - 2012 Apr


  • CMOS
  • doubly balanced mixer
  • drain mixer
  • millimeter wave (MMW)

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Analysis of a new 33-58-GHz doubly balanced drain mixer in 90-nm CMOS technology'. Together they form a unique fingerprint.

Cite this