Analysis and modeling of nano-crystalline silicon TFTs on flexible substrate with mechanical strain

M. H. Lee, S. T. Chang, J. J. Huang, G. R. Hu, Y. S. Huang, C. C. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The gap state density of nano-crystalline silicon active layer on flexible substrate will be redistributed with mechanical bending. The weak or broken bonds may contribute to the redistribution of trap states. During mechanical strain the deep states are redistributed in a Gaussian distribution, and are dissimilar to ordinary acceptor-like deep states which manifest with exponential distributions. We conclude that the DOS with TCAD modeling under mechanical strain is the fundamental reliability issue for the development of flexible electronics.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages654-655
Number of pages2
DOIs
Publication statusPublished - 2010 May 5
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 2010 Jan 32010 Jan 8

Publication series

NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period10/1/310/1/8

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Lee, M. H., Chang, S. T., Huang, J. J., Hu, G. R., Huang, Y. S., & Lee, C. C. (2010). Analysis and modeling of nano-crystalline silicon TFTs on flexible substrate with mechanical strain. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 654-655). [5424674] (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424674