Analysis and modeling of nano-crystalline silicon TFTs on flexible substrate with mechanical strain

M. H. Lee, S. T. Chang, J. J. Huang, G. R. Hu, Y. S. Huang, C. C. Lee

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    The gap state density of nano-crystalline silicon active layer on flexible substrate will be redistributed with mechanical bending. The weak or broken bonds may contribute to the redistribution of trap states. During mechanical strain the deep states are redistributed in a Gaussian distribution, and are dissimilar to ordinary acceptor-like deep states which manifest with exponential distributions. We conclude that the DOS with TCAD modeling under mechanical strain is the fundamental reliability issue for the development of flexible electronics.

    Original languageEnglish
    Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
    Pages654-655
    Number of pages2
    DOIs
    Publication statusPublished - 2010 May 5
    Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
    Duration: 2010 Jan 32010 Jan 8

    Other

    Other2010 3rd International Nanoelectronics Conference, INEC 2010
    CountryChina
    CityHongkong
    Period10/1/310/1/8

    Fingerprint

    Nanocrystalline silicon
    Flexible electronics
    DOS
    Gaussian distribution
    Substrates

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

    Cite this

    Lee, M. H., Chang, S. T., Huang, J. J., Hu, G. R., Huang, Y. S., & Lee, C. C. (2010). Analysis and modeling of nano-crystalline silicon TFTs on flexible substrate with mechanical strain. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 654-655). [5424674] https://doi.org/10.1109/INEC.2010.5424674

    Analysis and modeling of nano-crystalline silicon TFTs on flexible substrate with mechanical strain. / Lee, M. H.; Chang, S. T.; Huang, J. J.; Hu, G. R.; Huang, Y. S.; Lee, C. C.

    INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 654-655 5424674.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Lee, MH, Chang, ST, Huang, JJ, Hu, GR, Huang, YS & Lee, CC 2010, Analysis and modeling of nano-crystalline silicon TFTs on flexible substrate with mechanical strain. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424674, pp. 654-655, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 10/1/3. https://doi.org/10.1109/INEC.2010.5424674
    Lee MH, Chang ST, Huang JJ, Hu GR, Huang YS, Lee CC. Analysis and modeling of nano-crystalline silicon TFTs on flexible substrate with mechanical strain. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 654-655. 5424674 https://doi.org/10.1109/INEC.2010.5424674
    Lee, M. H. ; Chang, S. T. ; Huang, J. J. ; Hu, G. R. ; Huang, Y. S. ; Lee, C. C. / Analysis and modeling of nano-crystalline silicon TFTs on flexible substrate with mechanical strain. INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. pp. 654-655
    @inproceedings{e0316efaa2ba40729af21b6a27a344b1,
    title = "Analysis and modeling of nano-crystalline silicon TFTs on flexible substrate with mechanical strain",
    abstract = "The gap state density of nano-crystalline silicon active layer on flexible substrate will be redistributed with mechanical bending. The weak or broken bonds may contribute to the redistribution of trap states. During mechanical strain the deep states are redistributed in a Gaussian distribution, and are dissimilar to ordinary acceptor-like deep states which manifest with exponential distributions. We conclude that the DOS with TCAD modeling under mechanical strain is the fundamental reliability issue for the development of flexible electronics.",
    author = "Lee, {M. H.} and Chang, {S. T.} and Huang, {J. J.} and Hu, {G. R.} and Huang, {Y. S.} and Lee, {C. C.}",
    year = "2010",
    month = "5",
    day = "5",
    doi = "10.1109/INEC.2010.5424674",
    language = "English",
    isbn = "9781424435449",
    pages = "654--655",
    booktitle = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

    }

    TY - GEN

    T1 - Analysis and modeling of nano-crystalline silicon TFTs on flexible substrate with mechanical strain

    AU - Lee, M. H.

    AU - Chang, S. T.

    AU - Huang, J. J.

    AU - Hu, G. R.

    AU - Huang, Y. S.

    AU - Lee, C. C.

    PY - 2010/5/5

    Y1 - 2010/5/5

    N2 - The gap state density of nano-crystalline silicon active layer on flexible substrate will be redistributed with mechanical bending. The weak or broken bonds may contribute to the redistribution of trap states. During mechanical strain the deep states are redistributed in a Gaussian distribution, and are dissimilar to ordinary acceptor-like deep states which manifest with exponential distributions. We conclude that the DOS with TCAD modeling under mechanical strain is the fundamental reliability issue for the development of flexible electronics.

    AB - The gap state density of nano-crystalline silicon active layer on flexible substrate will be redistributed with mechanical bending. The weak or broken bonds may contribute to the redistribution of trap states. During mechanical strain the deep states are redistributed in a Gaussian distribution, and are dissimilar to ordinary acceptor-like deep states which manifest with exponential distributions. We conclude that the DOS with TCAD modeling under mechanical strain is the fundamental reliability issue for the development of flexible electronics.

    UR - http://www.scopus.com/inward/record.url?scp=77951660708&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=77951660708&partnerID=8YFLogxK

    U2 - 10.1109/INEC.2010.5424674

    DO - 10.1109/INEC.2010.5424674

    M3 - Conference contribution

    AN - SCOPUS:77951660708

    SN - 9781424435449

    SP - 654

    EP - 655

    BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

    ER -