Abstract
The gap state density of nano-crystalline silicon active layer on flexible substrate will be redistributed with mechanical bending. The weak or broken bonds may contribute to the redistribution of trap states. During mechanical strain the deep states are redistributed in a Gaussian distribution, and are dissimilar to ordinary acceptor-like deep states which manifest with exponential distributions. We conclude that the DOS with TCAD modeling under mechanical strain is the fundamental reliability issue for the development of flexible electronics.
| Original language | English |
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| Title of host publication | INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings |
| Pages | 654-655 |
| Number of pages | 2 |
| DOIs | |
| Publication status | Published - 2010 May 5 |
| Event | 2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: 2010 Jan 3 → 2010 Jan 8 |
Publication series
| Name | INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings |
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Other
| Other | 2010 3rd International Nanoelectronics Conference, INEC 2010 |
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| Country | China |
| City | Hongkong |
| Period | 10/1/3 → 10/1/8 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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Lee, M. H., Chang, S. T., Huang, J. J., Hu, G. R., Huang, Y. S., & Lee, C. C. (2010). Analysis and modeling of nano-crystalline silicon TFTs on flexible substrate with mechanical strain. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 654-655). [5424674] (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424674