Analysis and modeling of nano-crystalline silicon TFTs on flexible substrate with mechanical strain

M. H. Lee; S. T. Chang; J. J. Huang; G. R. Hu; Y. S. Huang; C. C. Lee

doi:10.1109/INEC.2010.5424674

Analysis and modeling of nano-crystalline silicon TFTs on flexible substrate with mechanical strain

M. H. Lee, S. T. Chang, J. J. Huang, G. R. Hu, Y. S. Huang, C. C. Lee

Graduate Institute of Electro-Optical Science And Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The gap state density of nano-crystalline silicon active layer on flexible substrate will be redistributed with mechanical bending. The weak or broken bonds may contribute to the redistribution of trap states. During mechanical strain the deep states are redistributed in a Gaussian distribution, and are dissimilar to ordinary acceptor-like deep states which manifest with exponential distributions. We conclude that the DOS with TCAD modeling under mechanical strain is the fundamental reliability issue for the development of flexible electronics.

Original language	English
Title of host publication	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages	654-655
Number of pages	2
DOIs	https://doi.org/10.1109/INEC.2010.5424674
Publication status	Published - 2010 May 5
Event	2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: 2010 Jan 3 → 2010 Jan 8

Publication series

Name	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other	2010 3rd International Nanoelectronics Conference, INEC 2010
Country	China
City	Hongkong
Period	10/1/3 → 10/1/8

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ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Lee, M. H., Chang, S. T., Huang, J. J., Hu, G. R., Huang, Y. S., & Lee, C. C. (2010). Analysis and modeling of nano-crystalline silicon TFTs on flexible substrate with mechanical strain. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 654-655). [5424674] (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424674

Analysis and modeling of nano-crystalline silicon TFTs on flexible substrate with mechanical strain. / Lee, M. H.; Chang, S. T.; Huang, J. J.; Hu, G. R.; Huang, Y. S.; Lee, C. C.

INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 654-655 5424674 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lee, MH, Chang, ST, Huang, JJ, Hu, GR, Huang, YS & Lee, CC 2010, Analysis and modeling of nano-crystalline silicon TFTs on flexible substrate with mechanical strain. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424674, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, pp. 654-655, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 10/1/3. https://doi.org/10.1109/INEC.2010.5424674

Lee MH, Chang ST, Huang JJ, Hu GR, Huang YS, Lee CC. Analysis and modeling of nano-crystalline silicon TFTs on flexible substrate with mechanical strain. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 654-655. 5424674. (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424674

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Access to Document

10.1109/INEC.2010.5424674