Abstract
The gap state density of nano-crystalline silicon active layer on flexible substrate will be redistributed with mechanical bending. The weak or broken bonds may contribute to the redistribution of trap states. During mechanical strain the deep states are redistributed in a Gaussian distribution, and are dissimilar to ordinary acceptor-like deep states which manifest with exponential distributions. We conclude that the DOS with TCAD modeling under mechanical strain is the fundamental reliability issue for the development of flexible electronics.
| Original language | English |
|---|---|
| Title of host publication | INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings |
| Pages | 654-655 |
| Number of pages | 2 |
| DOIs | |
| Publication status | Published - 2010 May 5 |
| Event | 2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: 2010 Jan 3 → 2010 Jan 8 |
Other
| Other | 2010 3rd International Nanoelectronics Conference, INEC 2010 |
|---|---|
| Country | China |
| City | Hongkong |
| Period | 10/1/3 → 10/1/8 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Analysis and modeling of nano-crystalline silicon TFTs on flexible substrate with mechanical strain. / Lee, M. H.; Chang, S. T.; Huang, J. J.; Hu, G. R.; Huang, Y. S.; Lee, C. C.
INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 654-655 5424674.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Analysis and modeling of nano-crystalline silicon TFTs on flexible substrate with mechanical strain
AU - Lee, M. H.
AU - Chang, S. T.
AU - Huang, J. J.
AU - Hu, G. R.
AU - Huang, Y. S.
AU - Lee, C. C.
PY - 2010/5/5
Y1 - 2010/5/5
N2 - The gap state density of nano-crystalline silicon active layer on flexible substrate will be redistributed with mechanical bending. The weak or broken bonds may contribute to the redistribution of trap states. During mechanical strain the deep states are redistributed in a Gaussian distribution, and are dissimilar to ordinary acceptor-like deep states which manifest with exponential distributions. We conclude that the DOS with TCAD modeling under mechanical strain is the fundamental reliability issue for the development of flexible electronics.
AB - The gap state density of nano-crystalline silicon active layer on flexible substrate will be redistributed with mechanical bending. The weak or broken bonds may contribute to the redistribution of trap states. During mechanical strain the deep states are redistributed in a Gaussian distribution, and are dissimilar to ordinary acceptor-like deep states which manifest with exponential distributions. We conclude that the DOS with TCAD modeling under mechanical strain is the fundamental reliability issue for the development of flexible electronics.
UR - http://www.scopus.com/inward/record.url?scp=77951660708&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77951660708&partnerID=8YFLogxK
U2 - 10.1109/INEC.2010.5424674
DO - 10.1109/INEC.2010.5424674
M3 - Conference contribution
AN - SCOPUS:77951660708
SN - 9781424435449
SP - 654
EP - 655
BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
ER -