Analysis and modeling of nano-crystalline silicon TFTs on flexible substrate with mechanical strain

M. H. Lee, S. T. Chang, J. J. Huang, G. R. Hu, Y. S. Huang, C. C. Lee

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    The gap state density of nano-crystalline silicon active layer on flexible substrate will be redistributed with mechanical bending. The weak or broken bonds may contribute to the redistribution of trap states. During mechanical strain the deep states are redistributed in a Gaussian distribution, and are dissimilar to ordinary acceptor-like deep states which manifest with exponential distributions. We conclude that the DOS with TCAD modeling under mechanical strain is the fundamental reliability issue for the development of flexible electronics.

    Original languageEnglish
    Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
    Pages654-655
    Number of pages2
    DOIs
    Publication statusPublished - 2010 May 5
    Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
    Duration: 2010 Jan 32010 Jan 8

    Publication series

    NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

    Other

    Other2010 3rd International Nanoelectronics Conference, INEC 2010
    CountryChina
    CityHongkong
    Period2010/01/032010/01/08

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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