Analysis and modeling of nano-crystalline silicon TFTs on flexible substrate with mechanical strain

Min-Hung Lee, S. T. Chang, B. F. Hsieh, J. J. Huang, C. C. Lee

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The gap state density of nano-crystalline silicon active layers on a flexible substrate was redistributed with mechanical bending. The weak or broken bonds may contribute to the redistribution of trap states. During mechanical strain, the deep states redistributed in a Gaussian distribution, and are dissimilar to ordinary acceptor-like deep states, which manifest with exponential distributions. We conclude that the gap state density with TCAD modeling under mechanical strain is the fundamental reliability issue for the development of flexible electronics.

Original languageEnglish
Pages (from-to)10485-10488
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume11
Issue number12
DOIs
Publication statusPublished - 2011 Dec 1

Fingerprint

Nanocrystalline silicon
Normal Distribution
Silicon
Flexible electronics
Gaussian distribution
silicon
Substrates
normal density functions
traps
electronics
thiazole-4-carboxamide adenine dinucleotide

Keywords

  • Flexible
  • Gap state density
  • Mechanical strain
  • Nano-crystalline silicon

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Analysis and modeling of nano-crystalline silicon TFTs on flexible substrate with mechanical strain. / Lee, Min-Hung; Chang, S. T.; Hsieh, B. F.; Huang, J. J.; Lee, C. C.

In: Journal of Nanoscience and Nanotechnology, Vol. 11, No. 12, 01.12.2011, p. 10485-10488.

Research output: Contribution to journalArticle

Lee, Min-Hung ; Chang, S. T. ; Hsieh, B. F. ; Huang, J. J. ; Lee, C. C. / Analysis and modeling of nano-crystalline silicon TFTs on flexible substrate with mechanical strain. In: Journal of Nanoscience and Nanotechnology. 2011 ; Vol. 11, No. 12. pp. 10485-10488.
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