Analysis and modeling of nano-crystalline silicon TFTs on flexible substrate with mechanical strain

Min-Hung Lee, S. T. Chang, B. F. Hsieh, J. J. Huang, C. C. Lee

    Research output: Contribution to journalArticlepeer-review

    2 Citations (Scopus)

    Abstract

    The gap state density of nano-crystalline silicon active layers on a flexible substrate was redistributed with mechanical bending. The weak or broken bonds may contribute to the redistribution of trap states. During mechanical strain, the deep states redistributed in a Gaussian distribution, and are dissimilar to ordinary acceptor-like deep states, which manifest with exponential distributions. We conclude that the gap state density with TCAD modeling under mechanical strain is the fundamental reliability issue for the development of flexible electronics.

    Original languageEnglish
    Pages (from-to)10485-10488
    Number of pages4
    JournalJournal of Nanoscience and Nanotechnology
    Volume11
    Issue number12
    DOIs
    Publication statusPublished - 2011 Dec 1

    Keywords

    • Flexible
    • Gap state density
    • Mechanical strain
    • Nano-crystalline silicon

    ASJC Scopus subject areas

    • Bioengineering
    • Chemistry(all)
    • Biomedical Engineering
    • Materials Science(all)
    • Condensed Matter Physics

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