An X-band half-watt CMOS power amplifier using interweaved parallel combining transformer

Jeng Han Tsai; Jen Wei Wang

doi:10.1109/LMWC.2017.2690878

An X-band half-watt CMOS power amplifier using interweaved parallel combining transformer

Jeng Han Tsai^*, Jen Wei Wang

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

An X-band half-watt fully integrated power amplifier (PA) using standard 0.18-μm 1P6M CMOS technology is presented in this letter. Utilizing an interweaved three-primary parallel combining transformer, the CMOS PA delivers 27.1 dBm of measured saturation output power (P_sat) with 22.7% of power-added efficiency at 9 GHz from a 3.3-V power supply. The measured output 1-dB gain compression point (OP₁ _dB) is 24.2 dBm and the gain performance is 11.2 dB at 9 GHz. The chip size is 1.045 × 0.84 mm². To the best of our knowledge, the PA is the first half-watt CMOS PA with excellent power density at the X-band.

Original language	English
Article number	7906581
Pages (from-to)	491-493
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	27
Issue number	5
DOIs	https://doi.org/10.1109/LMWC.2017.2690878
Publication status	Published - 2017 May

Keywords

CMOS
Power amplifiers (PAs)
Radio frequency integrated circuits
X-band

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/LMWC.2017.2690878

Cite this

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abstract = "An X-band half-watt fully integrated power amplifier (PA) using standard 0.18-μm 1P6M CMOS technology is presented in this letter. Utilizing an interweaved three-primary parallel combining transformer, the CMOS PA delivers 27.1 dBm of measured saturation output power (Psat) with 22.7% of power-added efficiency at 9 GHz from a 3.3-V power supply. The measured output 1-dB gain compression point (OP1 dB) is 24.2 dBm and the gain performance is 11.2 dB at 9 GHz. The chip size is 1.045 × 0.84 mm2. To the best of our knowledge, the PA is the first half-watt CMOS PA with excellent power density at the X-band.",

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AB - An X-band half-watt fully integrated power amplifier (PA) using standard 0.18-μm 1P6M CMOS technology is presented in this letter. Utilizing an interweaved three-primary parallel combining transformer, the CMOS PA delivers 27.1 dBm of measured saturation output power (Psat) with 22.7% of power-added efficiency at 9 GHz from a 3.3-V power supply. The measured output 1-dB gain compression point (OP1 dB) is 24.2 dBm and the gain performance is 11.2 dB at 9 GHz. The chip size is 1.045 × 0.84 mm2. To the best of our knowledge, the PA is the first half-watt CMOS PA with excellent power density at the X-band.

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KW - Radio frequency integrated circuits

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An X-band half-watt CMOS power amplifier using interweaved parallel combining transformer

Abstract

Keywords

ASJC Scopus subject areas

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