An X-band half-watt CMOS power amplifier using interweaved parallel combining transformer

Jeng Han Tsai, Jen Wei Wang

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

An X-band half-watt fully integrated power amplifier (PA) using standard 0.18-μm 1P6M CMOS technology is presented in this letter. Utilizing an interweaved three-primary parallel combining transformer, the CMOS PA delivers 27.1 dBm of measured saturation output power (Psat) with 22.7% of power-added efficiency at 9 GHz from a 3.3-V power supply. The measured output 1-dB gain compression point (OP1 dB) is 24.2 dBm and the gain performance is 11.2 dB at 9 GHz. The chip size is 1.045 × 0.84 mm2. To the best of our knowledge, the PA is the first half-watt CMOS PA with excellent power density at the X-band.

Original languageEnglish
Article number7906581
Pages (from-to)491-493
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume27
Issue number5
DOIs
Publication statusPublished - 2017 May 1

Keywords

  • CMOS
  • Power amplifiers (PAs)
  • Radio frequency integrated circuits
  • X-band

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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