An X-Band 29.6-dBm CMOS Power Amplifier Using Folded Radial Splitter and Binary Combiner Network

Jeng Han Tsai; Tiku Yu; Wang Lung Huang

doi:10.1109/LMWC.2019.2931453

An X-Band 29.6-dBm CMOS Power Amplifier Using Folded Radial Splitter and Binary Combiner Network

Jeng Han Tsai^*, Tiku Yu, Wang Lung Huang

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

An X-band fully integrated power amplifier (PA) has been designed and fabricated on CMOS technology. Utilizing a transformer-based folded radial power splitter and binary power combiner network, the CMOS PA delivers 29.6 dBm saturation power (P_sat) at 11 GHz. The measured gain is 11.2 dB, the output of 1-dB compression point (OP_1dB) is 28.2 dBm, and the peak power-added efficiency (PAE) is 15.5% at 11 GHz. To our knowledge, the PA achieves the highest P_sat and the highest OP_1dB among other reported CMOS PAs around X-band to date.

Original language	English
Article number	8807336
Pages (from-to)	607-609
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	29
Issue number	9
DOIs	https://doi.org/10.1109/LMWC.2019.2931453
Publication status	Published - 2019 Sept

Keywords

CMOS
X-band
fully integration
power amplifier (PA)
transformer

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/LMWC.2019.2931453

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title = "An X-Band 29.6-dBm CMOS Power Amplifier Using Folded Radial Splitter and Binary Combiner Network",

abstract = "An X-band fully integrated power amplifier (PA) has been designed and fabricated on CMOS technology. Utilizing a transformer-based folded radial power splitter and binary power combiner network, the CMOS PA delivers 29.6 dBm saturation power (Psat) at 11 GHz. The measured gain is 11.2 dB, the output of 1-dB compression point (OP1dB) is 28.2 dBm, and the peak power-added efficiency (PAE) is 15.5% at 11 GHz. To our knowledge, the PA achieves the highest Psat and the highest OP1dB among other reported CMOS PAs around X-band to date.",

keywords = "CMOS, X-band, fully integration, power amplifier (PA), transformer",

author = "Tsai, {Jeng Han} and Tiku Yu and Huang, {Wang Lung}",

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AU - Tsai, Jeng Han

AU - Yu, Tiku

AU - Huang, Wang Lung

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N2 - An X-band fully integrated power amplifier (PA) has been designed and fabricated on CMOS technology. Utilizing a transformer-based folded radial power splitter and binary power combiner network, the CMOS PA delivers 29.6 dBm saturation power (Psat) at 11 GHz. The measured gain is 11.2 dB, the output of 1-dB compression point (OP1dB) is 28.2 dBm, and the peak power-added efficiency (PAE) is 15.5% at 11 GHz. To our knowledge, the PA achieves the highest Psat and the highest OP1dB among other reported CMOS PAs around X-band to date.

AB - An X-band fully integrated power amplifier (PA) has been designed and fabricated on CMOS technology. Utilizing a transformer-based folded radial power splitter and binary power combiner network, the CMOS PA delivers 29.6 dBm saturation power (Psat) at 11 GHz. The measured gain is 11.2 dB, the output of 1-dB compression point (OP1dB) is 28.2 dBm, and the peak power-added efficiency (PAE) is 15.5% at 11 GHz. To our knowledge, the PA achieves the highest Psat and the highest OP1dB among other reported CMOS PAs around X-band to date.

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KW - X-band

KW - fully integration

KW - power amplifier (PA)

KW - transformer

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An X-Band 29.6-dBm CMOS Power Amplifier Using Folded Radial Splitter and Binary Combiner Network

Abstract

Keywords

ASJC Scopus subject areas

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