An X-band fully integrated power amplifier (PA) has been designed and fabricated on CMOS technology. Utilizing a transformer-based folded radial power splitter and binary power combiner network, the CMOS PA delivers 29.6 dBm saturation power (Psat) at 11 GHz. The measured gain is 11.2 dB, the output of 1-dB compression point (OP1dB) is 28.2 dBm, and the peak power-added efficiency (PAE) is 15.5% at 11 GHz. To our knowledge, the PA achieves the highest Psat and the highest OP1dB among other reported CMOS PAs around X-band to date.
- fully integration
- power amplifier (PA)
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering