An X-Band 29.6-dBm CMOS Power Amplifier Using Folded Radial Splitter and Binary Combiner Network

Jeng Han Tsai, Tiku Yu, Wang Lung Huang

Research output: Contribution to journalArticle

Abstract

An X-band fully integrated power amplifier (PA) has been designed and fabricated on CMOS technology. Utilizing a transformer-based folded radial power splitter and binary power combiner network, the CMOS PA delivers 29.6 dBm saturation power (Psat) at 11 GHz. The measured gain is 11.2 dB, the output of 1-dB compression point (OP1dB) is 28.2 dBm, and the peak power-added efficiency (PAE) is 15.5% at 11 GHz. To our knowledge, the PA achieves the highest Psat and the highest OP1dB among other reported CMOS PAs around X-band to date.

Original languageEnglish
Article number8807336
Pages (from-to)607-609
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume29
Issue number9
DOIs
Publication statusPublished - 2019 Sep

Keywords

  • CMOS
  • X-band
  • fully integration
  • power amplifier (PA)
  • transformer

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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