An ultra low-power delta-sigma modulator using charge-transfer amplifier technique

Chien Hung Kuo; Kuan Yi Lee; Ming Feng Wu

doi:10.1109/APCCAS.2008.4746250

An ultra low-power delta-sigma modulator using charge-transfer amplifier technique

Chien Hung Kuo^*, Kuan Yi Lee, Ming Feng Wu

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, an ultra low-power delta-sigma (ΔΣ) modulator applying charge-transfer amplifier (CTA) technique for voice-band applications is presented. Both the fully-differential charge-transfer amplifier and integrator are developed for higher dynamic range of the modulator. A 67 dB of the peak SNR within a 4 kHz of bandwidth is reached in the presented modulator under a 2.5 MHz of sampling rate. The prototype circuit has been implemented in a 0.18 μm 1P6M CMOS technology. The chip area excluding PADs is 0.50 × 0.28 mm². Due to its zero static current of CTA, only dynamic power is consumed in the circuit. The power consumption of the analog part of the presented second-order ΔΣ modulator is only 3.4 μW. The total power consumption of the whole modulator is 36 μW at a 1.8 V of supply voltage.

Original language	English
Title of host publication	Proceedings of APCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems
Pages	1236-1239
Number of pages	4
DOIs	https://doi.org/10.1109/APCCAS.2008.4746250
Publication status	Published - 2008
Event	APCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems - Macao, China Duration: 2008 Nov 30 → 2008 Dec 3

Publication series

Name	IEEE Asia-Pacific Conference on Circuits and Systems, Proceedings, APCCAS

Other

Other	APCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems
Country/Territory	China
City	Macao
Period	2008/11/30 → 2008/12/03

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/APCCAS.2008.4746250

Cite this

Kuo, C. H., Lee, K. Y., & Wu, M. F. (2008). An ultra low-power delta-sigma modulator using charge-transfer amplifier technique. In Proceedings of APCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems (pp. 1236-1239). Article 4746250 (IEEE Asia-Pacific Conference on Circuits and Systems, Proceedings, APCCAS). https://doi.org/10.1109/APCCAS.2008.4746250

An ultra low-power delta-sigma modulator using charge-transfer amplifier technique. / Kuo, Chien Hung; Lee, Kuan Yi; Wu, Ming Feng.
Proceedings of APCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems. 2008. p. 1236-1239 4746250 (IEEE Asia-Pacific Conference on Circuits and Systems, Proceedings, APCCAS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kuo, CH, Lee, KY & Wu, MF 2008, An ultra low-power delta-sigma modulator using charge-transfer amplifier technique. in Proceedings of APCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems., 4746250, IEEE Asia-Pacific Conference on Circuits and Systems, Proceedings, APCCAS, pp. 1236-1239, APCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems, Macao, China, 2008/11/30. https://doi.org/10.1109/APCCAS.2008.4746250

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abstract = "In this paper, an ultra low-power delta-sigma (ΔΣ) modulator applying charge-transfer amplifier (CTA) technique for voice-band applications is presented. Both the fully-differential charge-transfer amplifier and integrator are developed for higher dynamic range of the modulator. A 67 dB of the peak SNR within a 4 kHz of bandwidth is reached in the presented modulator under a 2.5 MHz of sampling rate. The prototype circuit has been implemented in a 0.18 μm 1P6M CMOS technology. The chip area excluding PADs is 0.50 × 0.28 mm2. Due to its zero static current of CTA, only dynamic power is consumed in the circuit. The power consumption of the analog part of the presented second-order ΔΣ modulator is only 3.4 μW. The total power consumption of the whole modulator is 36 μW at a 1.8 V of supply voltage.",

author = "Kuo, {Chien Hung} and Lee, {Kuan Yi} and Wu, {Ming Feng}",

year = "2008",

doi = "10.1109/APCCAS.2008.4746250",

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N2 - In this paper, an ultra low-power delta-sigma (ΔΣ) modulator applying charge-transfer amplifier (CTA) technique for voice-band applications is presented. Both the fully-differential charge-transfer amplifier and integrator are developed for higher dynamic range of the modulator. A 67 dB of the peak SNR within a 4 kHz of bandwidth is reached in the presented modulator under a 2.5 MHz of sampling rate. The prototype circuit has been implemented in a 0.18 μm 1P6M CMOS technology. The chip area excluding PADs is 0.50 × 0.28 mm2. Due to its zero static current of CTA, only dynamic power is consumed in the circuit. The power consumption of the analog part of the presented second-order ΔΣ modulator is only 3.4 μW. The total power consumption of the whole modulator is 36 μW at a 1.8 V of supply voltage.

AB - In this paper, an ultra low-power delta-sigma (ΔΣ) modulator applying charge-transfer amplifier (CTA) technique for voice-band applications is presented. Both the fully-differential charge-transfer amplifier and integrator are developed for higher dynamic range of the modulator. A 67 dB of the peak SNR within a 4 kHz of bandwidth is reached in the presented modulator under a 2.5 MHz of sampling rate. The prototype circuit has been implemented in a 0.18 μm 1P6M CMOS technology. The chip area excluding PADs is 0.50 × 0.28 mm2. Due to its zero static current of CTA, only dynamic power is consumed in the circuit. The power consumption of the analog part of the presented second-order ΔΣ modulator is only 3.4 μW. The total power consumption of the whole modulator is 36 μW at a 1.8 V of supply voltage.

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An ultra low-power delta-sigma modulator using charge-transfer amplifier technique

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