An ultra low-power delta-sigma modulator using charge-transfer amplifier technique

Chien Hung Kuo, Kuan Yi Lee, Ming Feng Wu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, an ultra low-power delta-sigma (ΔΣ) modulator applying charge-transfer amplifier (CTA) technique for voice-band applications is presented. Both the fully-differential charge-transfer amplifier and integrator are developed for higher dynamic range of the modulator. A 67 dB of the peak SNR within a 4 kHz of bandwidth is reached in the presented modulator under a 2.5 MHz of sampling rate. The prototype circuit has been implemented in a 0.18 μm 1P6M CMOS technology. The chip area excluding PADs is 0.50 × 0.28 mm2. Due to its zero static current of CTA, only dynamic power is consumed in the circuit. The power consumption of the analog part of the presented second-order ΔΣ modulator is only 3.4 μW. The total power consumption of the whole modulator is 36 μW at a 1.8 V of supply voltage.

Original languageEnglish
Title of host publicationProceedings of APCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems
Pages1236-1239
Number of pages4
DOIs
Publication statusPublished - 2008
EventAPCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems - Macao, China
Duration: 2008 Nov 302008 Dec 3

Other

OtherAPCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems
CountryChina
CityMacao
Period08/11/3008/12/3

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Kuo, C. H., Lee, K. Y., & Wu, M. F. (2008). An ultra low-power delta-sigma modulator using charge-transfer amplifier technique. In Proceedings of APCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems (pp. 1236-1239). [4746250] https://doi.org/10.1109/APCCAS.2008.4746250