An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor

Hsiao Hsuan Hsu; Chun Yen Chang; Chun Hu Cheng; Shan Haw Chiou; Chiung Hui Huang; Yu Chien Chiu

doi:10.1109/TNANO.2014.2332395

An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor

Hsiao Hsuan Hsu, Chun Yen Chang, Chun Hu Cheng, Shan Haw Chiou, Chiung Hui Huang, Yu Chien Chiu

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

This study involved developing a low-power and high-mobility metal-oxide thin-film transistor that incorporated a bilayer IGZO/IGZO:Ti semiconductor material. Compared with control metal-oxide TFTs, the bilayer IGZO TFT through thickness modulation of IGZO:Ti can reach the smallest subthreshold swing (85 mV/decade) and the highest field effect mobility (49 cm²/Vs) at a drive voltage of <3 V. This performance level improvement can be attributed to the gettering effect caused by the IGZO:Ti capping layer and its dual advantages, which enhance device mobility and improve gate swing.

Original language	English
Article number	6841632
Pages (from-to)	933-938
Number of pages	6
Journal	IEEE Transactions on Nanotechnology
Volume	13
Issue number	5
DOIs	https://doi.org/10.1109/TNANO.2014.2332395
Publication status	Published - 2014 Sept

Keywords

Gettering
InGaZnO (IGZO)
thin-film transistor (TFT)

ASJC Scopus subject areas

Computer Science Applications
Electrical and Electronic Engineering

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10.1109/TNANO.2014.2332395

Cite this

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title = "An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor",

abstract = "This study involved developing a low-power and high-mobility metal-oxide thin-film transistor that incorporated a bilayer IGZO/IGZO:Ti semiconductor material. Compared with control metal-oxide TFTs, the bilayer IGZO TFT through thickness modulation of IGZO:Ti can reach the smallest subthreshold swing (85 mV/decade) and the highest field effect mobility (49 cm2/Vs) at a drive voltage of <3 V. This performance level improvement can be attributed to the gettering effect caused by the IGZO:Ti capping layer and its dual advantages, which enhance device mobility and improve gate swing.",

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author = "Hsu, {Hsiao Hsuan} and Chang, {Chun Yen} and Cheng, {Chun Hu} and Chiou, {Shan Haw} and Huang, {Chiung Hui} and Chiu, {Yu Chien}",

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AU - Cheng, Chun Hu

AU - Chiou, Shan Haw

AU - Huang, Chiung Hui

AU - Chiu, Yu Chien

PY - 2014/9

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AB - This study involved developing a low-power and high-mobility metal-oxide thin-film transistor that incorporated a bilayer IGZO/IGZO:Ti semiconductor material. Compared with control metal-oxide TFTs, the bilayer IGZO TFT through thickness modulation of IGZO:Ti can reach the smallest subthreshold swing (85 mV/decade) and the highest field effect mobility (49 cm2/Vs) at a drive voltage of <3 V. This performance level improvement can be attributed to the gettering effect caused by the IGZO:Ti capping layer and its dual advantages, which enhance device mobility and improve gate swing.

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An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor

Abstract

Keywords

ASJC Scopus subject areas

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