An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor

Hsiao Hsuan Hsu, Chun Yen Chang, Chun Hu Cheng, Shan Haw Chiou, Chiung Hui Huang, Yu Chien Chiu

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

This study involved developing a low-power and high-mobility metal-oxide thin-film transistor that incorporated a bilayer IGZO/IGZO:Ti semiconductor material. Compared with control metal-oxide TFTs, the bilayer IGZO TFT through thickness modulation of IGZO:Ti can reach the smallest subthreshold swing (85 mV/decade) and the highest field effect mobility (49 cm2/Vs) at a drive voltage of <3 V. This performance level improvement can be attributed to the gettering effect caused by the IGZO:Ti capping layer and its dual advantages, which enhance device mobility and improve gate swing.

Original languageEnglish
Article number6841632
Pages (from-to)933-938
Number of pages6
JournalIEEE Transactions on Nanotechnology
Volume13
Issue number5
DOIs
Publication statusPublished - 2014 Sep

Fingerprint

Thin film transistors
Oxygen
Metals
Oxide films
Modulation
Semiconductor materials
Oxides
Electric potential

Keywords

  • Gettering
  • InGaZnO (IGZO)
  • thin-film transistor (TFT)

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering

Cite this

An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor. / Hsu, Hsiao Hsuan; Chang, Chun Yen; Cheng, Chun Hu; Chiou, Shan Haw; Huang, Chiung Hui; Chiu, Yu Chien.

In: IEEE Transactions on Nanotechnology, Vol. 13, No. 5, 6841632, 09.2014, p. 933-938.

Research output: Contribution to journalArticle

Hsu, Hsiao Hsuan ; Chang, Chun Yen ; Cheng, Chun Hu ; Chiou, Shan Haw ; Huang, Chiung Hui ; Chiu, Yu Chien. / An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor. In: IEEE Transactions on Nanotechnology. 2014 ; Vol. 13, No. 5. pp. 933-938.
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