@inproceedings{d592f32256e84325973235eda952a49b,
title = "An E-band transformer-based 90-nm CMOS LNA",
abstract = "This paper present an E-band transformer-based three-stage low-noise amplifier (LNA) in 90-nm CMOS process. The common-source (CS) and cascode configuration are selected to achieve high gain and low noise requirements in LNA design. A noise reduction technique is utilized to suppress the extra noise induced by cascode configuration. For impedance transformation and compact chip area, transformers are utilized in the inter-stage and output matching. This LNA demonstrates a 20.2-dB gain and a noise figure (NF) of 8.8 dB at 67 GHz with a compact chip size of 0.38 mm2. The dc power is 15.4 mW.",
keywords = "CMOS, Cascode, Low-noise amplifier (LNA), Noise figure (NF), Transformer",
author = "Tsai, {Jeng Han} and Hung, {Chuan Chi} and Cheng, {Jen Hao} and Lin, {Chen Fang} and Chang, {Ruei An}",
note = "Funding Information: This work was supported by the Ministry of Science and Technology of Taiwan under Grant MOST 105-2221-E-003-001-MY2 and Grant MOST 107-222l-E-003-003. The chips were fabricated by TSMC Semiconductors Corp. through the Chip Implementation Center (CIC), Hsmchu, Taiwan. Publisher Copyright: {\textcopyright} 2018 IEICE; 30th Asia-Pacific Microwave Conference, APMC 2018 ; Conference date: 06-11-2018 Through 09-11-2018",
year = "2019",
month = jan,
day = "16",
doi = "10.23919/APMC.2018.8617616",
language = "English",
series = "Asia-Pacific Microwave Conference Proceedings, APMC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "660--662",
booktitle = "2018 Asia-Pacific Microwave Conference, APMC 2018 - Proceedings",
}