An E-band transformer-based 90-nm CMOS LNA

Jeng Han Tsai, Chuan Chi Hung, Jen Hao Cheng, Chen Fang Lin, Ruei An Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper present an E-band transformer-based three-stage low-noise amplifier (LNA) in 90-nm CMOS process. The common-source (CS) and cascode configuration are selected to achieve high gain and low noise requirements in LNA design. A noise reduction technique is utilized to suppress the extra noise induced by cascode configuration. For impedance transformation and compact chip area, transformers are utilized in the inter-stage and output matching. This LNA demonstrates a 20.2-dB gain and a noise figure (NF) of 8.8 dB at 67 GHz with a compact chip size of 0.38 mm2. The dc power is 15.4 mW.

Original languageEnglish
Title of host publication2018 Asia-Pacific Microwave Conference, APMC 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages660-662
Number of pages3
ISBN (Electronic)9784902339451
DOIs
Publication statusPublished - 2019 Jan 16
Event30th Asia-Pacific Microwave Conference, APMC 2018 - Kyoto, Japan
Duration: 2018 Nov 62018 Nov 9

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC
Volume2018-November

Conference

Conference30th Asia-Pacific Microwave Conference, APMC 2018
CountryJapan
CityKyoto
Period18/11/618/11/9

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Keywords

  • CMOS
  • Cascode
  • Low-noise amplifier (LNA)
  • Noise figure (NF)
  • Transformer

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Tsai, J. H., Hung, C. C., Cheng, J. H., Lin, C. F., & Chang, R. A. (2019). An E-band transformer-based 90-nm CMOS LNA. In 2018 Asia-Pacific Microwave Conference, APMC 2018 - Proceedings (pp. 660-662). [8617616] (Asia-Pacific Microwave Conference Proceedings, APMC; Vol. 2018-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/APMC.2018.8617616