Amorphous titanium oxide semiconductors on Quasi-crystal-like InGaZnO channels for thin film transistor applications

Hsiao Hsuan Hsu, Ping Chiou, Chun Hu Cheng*, Shiang Shiou Yen, Chien Hung Tung, Chun Yen Chang, Yu Chien Lai, Hung Wei Li, Chih Pang Chang, Hsueh Hsing Lu, Ching Sang Chuang, Yu Hsin Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

This paper reports an InGaZnO thin-film transistor with titanium-oxide semiconductor as channel capping layer. Based on the experimental results, the titanium-oxide semiconductor has the function of not only a surface passivation layer to reduce the defect states localized at grain boundaries near source/drain contacts, but also a mobility booster to enhance electric field across channel. Compared to control IGZO TFT, the crystalline IGZO TFTs with titanium-oxide semiconductor exhibits an improved performance of a low drive voltage of <5 V, a low threshold voltage of 1.9 V, a low sub-threshold swing of 244 mV/decade , and a high mobility of 13.7 cm2/V·s. The simple titanium-oxide capping process have been demonstrated in this work, which provides considerable potential for further display applications requiring a low power operation and a low-temperature fabrication.

Original languageEnglish
Article number6887354
Pages (from-to)506-511
Number of pages6
JournalIEEE/OSA Journal of Display Technology
Volume11
Issue number6
DOIs
Publication statusPublished - 2015 Jun 1

Keywords

  • Crystalline phase
  • indium-gallium-zinc oxide (IGZO)
  • thin-film transistor (TFT)
  • titanium oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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