Amorphous titanium oxide semiconductors on Quasi-crystal-like InGaZnO channels for thin film transistor applications

Hsiao Hsuan Hsu, Ping Chiou, Chun Hu Cheng, Shiang Shiou Yen, Chien Hung Tung, Chun Yen Chang, Yu Chien Lai, Hung Wei Li, Chih Pang Chang, Hsueh Hsing Lu, Ching Sang Chuang, Yu Hsin Lin

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

This paper reports an InGaZnO thin-film transistor with titanium-oxide semiconductor as channel capping layer. Based on the experimental results, the titanium-oxide semiconductor has the function of not only a surface passivation layer to reduce the defect states localized at grain boundaries near source/drain contacts, but also a mobility booster to enhance electric field across channel. Compared to control IGZO TFT, the crystalline IGZO TFTs with titanium-oxide semiconductor exhibits an improved performance of a low drive voltage of <5 V, a low threshold voltage of 1.9 V, a low sub-threshold swing of 244 mV/decade , and a high mobility of 13.7 cm2/V·s. The simple titanium-oxide capping process have been demonstrated in this work, which provides considerable potential for further display applications requiring a low power operation and a low-temperature fabrication.

Original languageEnglish
Article number6887354
Pages (from-to)506-511
Number of pages6
JournalIEEE/OSA Journal of Display Technology
Volume11
Issue number6
DOIs
Publication statusPublished - 2015 Jun 1

Keywords

  • Crystalline phase
  • indium-gallium-zinc oxide (IGZO)
  • thin-film transistor (TFT)
  • titanium oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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