Abstract
A low-cost process with electron beam evaporator deposition for amorphous layers was demonstrated in hetero-junction with intrinsic thin layer (HIT) solar cell. The cleaning process with saw damage removal procedure and the annealing temperature are also discussed in this work. The open-circuit voltage (Voc) and short-circuit current density (Jsc) were obtained as 285 mV and 2.9 mA/cm2, respectively, with 5 min saw damage removal and 450°C forming gas annealing. Therefore, the low-cost process with the electron beam evaporator deposition could possibly fabricate the HIT solar cell and be a candidate for future higher performance photovoltaic device with optimisation process condition.
| Original language | English |
|---|---|
| Pages (from-to) | 485-491 |
| Number of pages | 7 |
| Journal | International Journal of Nanotechnology |
| Volume | 13 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2016 |
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Keywords
- Crystalline silicon
- Electron beam evaporation
- Hetero-junction with intrinsic thin layer
- Heterojunction
- HIT
- Photovoltaic
ASJC Scopus subject areas
- Bioengineering
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering
Cite this
Amorphous layers by electron beam evaporator deposition for hetero-junction with intrinsic thin layer solar cells applications. / Liu, Sally; Chen, Zhi Yu; Chang, Shu Tong; Lee, Min Hung.
In: International Journal of Nanotechnology, Vol. 13, No. 7, 2016, p. 485-491.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Amorphous layers by electron beam evaporator deposition for hetero-junction with intrinsic thin layer solar cells applications
AU - Liu, Sally
AU - Chen, Zhi Yu
AU - Chang, Shu Tong
AU - Lee, Min Hung
PY - 2016
Y1 - 2016
N2 - A low-cost process with electron beam evaporator deposition for amorphous layers was demonstrated in hetero-junction with intrinsic thin layer (HIT) solar cell. The cleaning process with saw damage removal procedure and the annealing temperature are also discussed in this work. The open-circuit voltage (Voc) and short-circuit current density (Jsc) were obtained as 285 mV and 2.9 mA/cm2, respectively, with 5 min saw damage removal and 450°C forming gas annealing. Therefore, the low-cost process with the electron beam evaporator deposition could possibly fabricate the HIT solar cell and be a candidate for future higher performance photovoltaic device with optimisation process condition.
AB - A low-cost process with electron beam evaporator deposition for amorphous layers was demonstrated in hetero-junction with intrinsic thin layer (HIT) solar cell. The cleaning process with saw damage removal procedure and the annealing temperature are also discussed in this work. The open-circuit voltage (Voc) and short-circuit current density (Jsc) were obtained as 285 mV and 2.9 mA/cm2, respectively, with 5 min saw damage removal and 450°C forming gas annealing. Therefore, the low-cost process with the electron beam evaporator deposition could possibly fabricate the HIT solar cell and be a candidate for future higher performance photovoltaic device with optimisation process condition.
KW - Crystalline silicon
KW - Electron beam evaporation
KW - Hetero-junction with intrinsic thin layer
KW - Heterojunction
KW - HIT
KW - Photovoltaic
UR - http://www.scopus.com/inward/record.url?scp=84983652257&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84983652257&partnerID=8YFLogxK
U2 - 10.1504/IJNT.2016.078555
DO - 10.1504/IJNT.2016.078555
M3 - Article
AN - SCOPUS:84983652257
VL - 13
SP - 485
EP - 491
JO - International Journal of Nanotechnology
JF - International Journal of Nanotechnology
SN - 1475-7435
IS - 7
ER -