Amorphous layers by electron beam evaporator deposition for hetero-junction with intrinsic thin layer solar cells applications

Sally Liu, Zhi Yu Chen, Shu Tong Chang, Min Hung Lee

Research output: Contribution to journalArticle

Abstract

A low-cost process with electron beam evaporator deposition for amorphous layers was demonstrated in hetero-junction with intrinsic thin layer (HIT) solar cell. The cleaning process with saw damage removal procedure and the annealing temperature are also discussed in this work. The open-circuit voltage (Voc) and short-circuit current density (Jsc) were obtained as 285 mV and 2.9 mA/cm2, respectively, with 5 min saw damage removal and 450°C forming gas annealing. Therefore, the low-cost process with the electron beam evaporator deposition could possibly fabricate the HIT solar cell and be a candidate for future higher performance photovoltaic device with optimisation process condition.

Original languageEnglish
Pages (from-to)485-491
Number of pages7
JournalInternational Journal of Nanotechnology
Volume13
Issue number7
DOIs
Publication statusPublished - 2016 Jan 1

Fingerprint

evaporators
Evaporators
Electron beams
Solar cells
solar cells
electron beams
Annealing
damage
annealing
Open circuit voltage
short circuit currents
open circuit voltage
Short circuit currents
cleaning
Costs
Cleaning
Current density
Gases
current density
optimization

Keywords

  • Crystalline silicon
  • Electron beam evaporation
  • HIT
  • Hetero-junction with intrinsic thin layer
  • Heterojunction
  • Photovoltaic

ASJC Scopus subject areas

  • Bioengineering
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Amorphous layers by electron beam evaporator deposition for hetero-junction with intrinsic thin layer solar cells applications. / Liu, Sally; Chen, Zhi Yu; Chang, Shu Tong; Lee, Min Hung.

In: International Journal of Nanotechnology, Vol. 13, No. 7, 01.01.2016, p. 485-491.

Research output: Contribution to journalArticle

@article{90f6e220516b4d27a8387d38b8cb36c3,
title = "Amorphous layers by electron beam evaporator deposition for hetero-junction with intrinsic thin layer solar cells applications",
abstract = "A low-cost process with electron beam evaporator deposition for amorphous layers was demonstrated in hetero-junction with intrinsic thin layer (HIT) solar cell. The cleaning process with saw damage removal procedure and the annealing temperature are also discussed in this work. The open-circuit voltage (Voc) and short-circuit current density (Jsc) were obtained as 285 mV and 2.9 mA/cm2, respectively, with 5 min saw damage removal and 450°C forming gas annealing. Therefore, the low-cost process with the electron beam evaporator deposition could possibly fabricate the HIT solar cell and be a candidate for future higher performance photovoltaic device with optimisation process condition.",
keywords = "Crystalline silicon, Electron beam evaporation, HIT, Hetero-junction with intrinsic thin layer, Heterojunction, Photovoltaic",
author = "Sally Liu and Chen, {Zhi Yu} and Chang, {Shu Tong} and Lee, {Min Hung}",
year = "2016",
month = "1",
day = "1",
doi = "10.1504/IJNT.2016.078555",
language = "English",
volume = "13",
pages = "485--491",
journal = "International Journal of Nanotechnology",
issn = "1475-7435",
publisher = "Inderscience Enterprises Ltd",
number = "7",

}

TY - JOUR

T1 - Amorphous layers by electron beam evaporator deposition for hetero-junction with intrinsic thin layer solar cells applications

AU - Liu, Sally

AU - Chen, Zhi Yu

AU - Chang, Shu Tong

AU - Lee, Min Hung

PY - 2016/1/1

Y1 - 2016/1/1

N2 - A low-cost process with electron beam evaporator deposition for amorphous layers was demonstrated in hetero-junction with intrinsic thin layer (HIT) solar cell. The cleaning process with saw damage removal procedure and the annealing temperature are also discussed in this work. The open-circuit voltage (Voc) and short-circuit current density (Jsc) were obtained as 285 mV and 2.9 mA/cm2, respectively, with 5 min saw damage removal and 450°C forming gas annealing. Therefore, the low-cost process with the electron beam evaporator deposition could possibly fabricate the HIT solar cell and be a candidate for future higher performance photovoltaic device with optimisation process condition.

AB - A low-cost process with electron beam evaporator deposition for amorphous layers was demonstrated in hetero-junction with intrinsic thin layer (HIT) solar cell. The cleaning process with saw damage removal procedure and the annealing temperature are also discussed in this work. The open-circuit voltage (Voc) and short-circuit current density (Jsc) were obtained as 285 mV and 2.9 mA/cm2, respectively, with 5 min saw damage removal and 450°C forming gas annealing. Therefore, the low-cost process with the electron beam evaporator deposition could possibly fabricate the HIT solar cell and be a candidate for future higher performance photovoltaic device with optimisation process condition.

KW - Crystalline silicon

KW - Electron beam evaporation

KW - HIT

KW - Hetero-junction with intrinsic thin layer

KW - Heterojunction

KW - Photovoltaic

UR - http://www.scopus.com/inward/record.url?scp=84983652257&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84983652257&partnerID=8YFLogxK

U2 - 10.1504/IJNT.2016.078555

DO - 10.1504/IJNT.2016.078555

M3 - Article

AN - SCOPUS:84983652257

VL - 13

SP - 485

EP - 491

JO - International Journal of Nanotechnology

JF - International Journal of Nanotechnology

SN - 1475-7435

IS - 7

ER -