Amorphous bilayer TiO2-InGaZnO thin film transistors with low drive voltage

Hsiao Hsuan Hsu; Chun Hu Cheng; Ping Chiou; Yu Chien Chiu; Chun Yen Chang; Zhi Wei Zheng

doi:10.1016/j.sse.2014.05.010

Amorphous bilayer TiO₂-InGaZnO thin film transistors with low drive voltage

Hsiao Hsuan Hsu, Chun Hu Cheng^*, Ping Chiou, Yu Chien Chiu, Chun Yen Chang, Zhi Wei Zheng

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

This paper describes a high-performance thin-film transistor (TFT) fabricated using TiO₂ and InGaZnO semiconducting layers. Favorable transistor characteristics, including a low threshold voltage of 0.45 V, a small subthreshold swing of 174 mV/decade, and a high field effect mobility of 19 cm²/V s at a low drive voltage of <2 V, were achieved. This favorable performance mainly resulted from the combined effect of the high-dielectric-constant gate dielectric and the TiO₂-InGaZnO active semiconductor bilayer, which reduced the operating voltage, enhanced the device mobility, and improved the transistor gate swing. This TiO₂-InGaZnO TFT exhibits great potential for future high-speed and high-resolution display applications.

Original language	English
Pages (from-to)	51-54
Number of pages	4
Journal	Solid-State Electronics
Volume	99
DOIs	https://doi.org/10.1016/j.sse.2014.05.010
Publication status	Published - 2014 Sept

Keywords

InGaZnO (IGZO)
Thin-film transistor (TFT)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1016/j.sse.2014.05.010

Cite this

@article{ed8bffd0e2c44efa9dcd8bea75c0de2c,

title = "Amorphous bilayer TiO2-InGaZnO thin film transistors with low drive voltage",

abstract = "This paper describes a high-performance thin-film transistor (TFT) fabricated using TiO2 and InGaZnO semiconducting layers. Favorable transistor characteristics, including a low threshold voltage of 0.45 V, a small subthreshold swing of 174 mV/decade, and a high field effect mobility of 19 cm2/V s at a low drive voltage of <2 V, were achieved. This favorable performance mainly resulted from the combined effect of the high-dielectric-constant gate dielectric and the TiO2-InGaZnO active semiconductor bilayer, which reduced the operating voltage, enhanced the device mobility, and improved the transistor gate swing. This TiO2-InGaZnO TFT exhibits great potential for future high-speed and high-resolution display applications.",

keywords = "InGaZnO (IGZO), Thin-film transistor (TFT)",

author = "Hsu, {Hsiao Hsuan} and Cheng, {Chun Hu} and Ping Chiou and Chiu, {Yu Chien} and Chang, {Chun Yen} and Zheng, {Zhi Wei}",

note = "Funding Information: This work was supported by the National Science Council (NSC) of Taiwan, Republic of China , under Contract No. NSC 102-2221-E-003-019 .",

year = "2014",

month = sep,

doi = "10.1016/j.sse.2014.05.010",

language = "English",

volume = "99",

pages = "51--54",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Amorphous bilayer TiO2-InGaZnO thin film transistors with low drive voltage

AU - Hsu, Hsiao Hsuan

AU - Cheng, Chun Hu

AU - Chiou, Ping

AU - Chiu, Yu Chien

AU - Chang, Chun Yen

AU - Zheng, Zhi Wei

N1 - Funding Information: This work was supported by the National Science Council (NSC) of Taiwan, Republic of China , under Contract No. NSC 102-2221-E-003-019 .

PY - 2014/9

Y1 - 2014/9

N2 - This paper describes a high-performance thin-film transistor (TFT) fabricated using TiO2 and InGaZnO semiconducting layers. Favorable transistor characteristics, including a low threshold voltage of 0.45 V, a small subthreshold swing of 174 mV/decade, and a high field effect mobility of 19 cm2/V s at a low drive voltage of <2 V, were achieved. This favorable performance mainly resulted from the combined effect of the high-dielectric-constant gate dielectric and the TiO2-InGaZnO active semiconductor bilayer, which reduced the operating voltage, enhanced the device mobility, and improved the transistor gate swing. This TiO2-InGaZnO TFT exhibits great potential for future high-speed and high-resolution display applications.

AB - This paper describes a high-performance thin-film transistor (TFT) fabricated using TiO2 and InGaZnO semiconducting layers. Favorable transistor characteristics, including a low threshold voltage of 0.45 V, a small subthreshold swing of 174 mV/decade, and a high field effect mobility of 19 cm2/V s at a low drive voltage of <2 V, were achieved. This favorable performance mainly resulted from the combined effect of the high-dielectric-constant gate dielectric and the TiO2-InGaZnO active semiconductor bilayer, which reduced the operating voltage, enhanced the device mobility, and improved the transistor gate swing. This TiO2-InGaZnO TFT exhibits great potential for future high-speed and high-resolution display applications.

KW - InGaZnO (IGZO)

KW - Thin-film transistor (TFT)

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DO - 10.1016/j.sse.2014.05.010

M3 - Article

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SN - 0038-1101

VL - 99

SP - 51

EP - 54

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -