Amorphous bilayer TiO2-InGaZnO thin film transistors with low drive voltage

Hsiao Hsuan Hsu, Chun Hu Cheng*, Ping Chiou, Yu Chien Chiu, Chun Yen Chang, Zhi Wei Zheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


This paper describes a high-performance thin-film transistor (TFT) fabricated using TiO2 and InGaZnO semiconducting layers. Favorable transistor characteristics, including a low threshold voltage of 0.45 V, a small subthreshold swing of 174 mV/decade, and a high field effect mobility of 19 cm2/V s at a low drive voltage of <2 V, were achieved. This favorable performance mainly resulted from the combined effect of the high-dielectric-constant gate dielectric and the TiO2-InGaZnO active semiconductor bilayer, which reduced the operating voltage, enhanced the device mobility, and improved the transistor gate swing. This TiO2-InGaZnO TFT exhibits great potential for future high-speed and high-resolution display applications.

Original languageEnglish
Pages (from-to)51-54
Number of pages4
JournalSolid-State Electronics
Publication statusPublished - 2014 Sept


  • InGaZnO (IGZO)
  • Thin-film transistor (TFT)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering


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