Amorphous bilayer TiO2-InGaZnO thin film transistors with low drive voltage

Hsiao Hsuan Hsu, Chun Hu Cheng, Ping Chiou, Yu Chien Chiu, Chun Yen Chang, Zhi Wei Zheng

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

This paper describes a high-performance thin-film transistor (TFT) fabricated using TiO2 and InGaZnO semiconducting layers. Favorable transistor characteristics, including a low threshold voltage of 0.45 V, a small subthreshold swing of 174 mV/decade, and a high field effect mobility of 19 cm2/V s at a low drive voltage of <2 V, were achieved. This favorable performance mainly resulted from the combined effect of the high-dielectric-constant gate dielectric and the TiO2-InGaZnO active semiconductor bilayer, which reduced the operating voltage, enhanced the device mobility, and improved the transistor gate swing. This TiO2-InGaZnO TFT exhibits great potential for future high-speed and high-resolution display applications.

Original languageEnglish
Pages (from-to)51-54
Number of pages4
JournalSolid-State Electronics
Volume99
DOIs
Publication statusPublished - 2014 Sep

Fingerprint

Thin film transistors
Transistors
transistors
Gates (transistor)
Gate dielectrics
Electric potential
electric potential
thin films
Threshold voltage
Permittivity
Display devices
Semiconductor materials
threshold voltage
low voltage
high speed
permittivity
high resolution

Keywords

  • InGaZnO (IGZO)
  • Thin-film transistor (TFT)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Amorphous bilayer TiO2-InGaZnO thin film transistors with low drive voltage. / Hsu, Hsiao Hsuan; Cheng, Chun Hu; Chiou, Ping; Chiu, Yu Chien; Chang, Chun Yen; Zheng, Zhi Wei.

In: Solid-State Electronics, Vol. 99, 09.2014, p. 51-54.

Research output: Contribution to journalArticle

Hsu, Hsiao Hsuan ; Cheng, Chun Hu ; Chiou, Ping ; Chiu, Yu Chien ; Chang, Chun Yen ; Zheng, Zhi Wei. / Amorphous bilayer TiO2-InGaZnO thin film transistors with low drive voltage. In: Solid-State Electronics. 2014 ; Vol. 99. pp. 51-54.
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