Adsorption and thermal decomposition of H2S on Si(100)

Ying Huang Lai; Chuin Tih Yeh; Yi Hsin Lin; Wei Hsiu Hung

doi:10.1016/S0039-6028(02)02208-2

Adsorption and thermal decomposition of H₂S on Si(100)

Ying Huang Lai, Chuin Tih Yeh, Yi Hsin Lin, Wei Hsiu Hung^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Adsorption and thermal decomposition of H₂S on Si(100)-2×1 are studied by means of temperature-programmed desorption (TPD) and X-ray photoemission spectroscopy (XPS) with synchrotron radiation. The H₂S molecule dissociates to form H and HS on the Si surface at adsorption temperature of 115 K. The Si(100)-2×1 surface structure is conserved upon the adsorption of H₂S due to bonding of dissociative H and HS on two Si atoms in a dimer without breaking the Si-Si dimer bond. H₂ and SiS are the only desorption products of thermal decomposition of H₂S with peaks at 780 and 820 K, respectively. On the basis of TPD and XPS results, intermediates involved in decomposition of H₂S and their adsorption configurations are proposed and discussed.

Original language	English
Pages (from-to)	150-156
Number of pages	7
Journal	Surface Science
Volume	519
Issue number	1-2
DOIs	https://doi.org/10.1016/S0039-6028(02)02208-2
Publication status	Published - 2002 Nov 1
Externally published	Yes

Keywords

Hydrogen sulphide
Silicon
Thermal desorption
X-ray photoelectron spectroscopy

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

Access to Document

10.1016/S0039-6028(02)02208-2

Cite this

@article{bbedb11da2184ab5866199ce8df6088a,

title = "Adsorption and thermal decomposition of H2S on Si(100)",

abstract = "Adsorption and thermal decomposition of H2S on Si(100)-2×1 are studied by means of temperature-programmed desorption (TPD) and X-ray photoemission spectroscopy (XPS) with synchrotron radiation. The H2S molecule dissociates to form H and HS on the Si surface at adsorption temperature of 115 K. The Si(100)-2×1 surface structure is conserved upon the adsorption of H2S due to bonding of dissociative H and HS on two Si atoms in a dimer without breaking the Si-Si dimer bond. H2 and SiS are the only desorption products of thermal decomposition of H2S with peaks at 780 and 820 K, respectively. On the basis of TPD and XPS results, intermediates involved in decomposition of H2S and their adsorption configurations are proposed and discussed.",

keywords = "Hydrogen sulphide, Silicon, Thermal desorption, X-ray photoelectron spectroscopy",

author = "Lai, {Ying Huang} and Yeh, {Chuin Tih} and Lin, {Yi Hsin} and Hung, {Wei Hsiu}",

note = "Funding Information: This work was supported by SRRC and National Science Council under grant no. NSC91-2113-M-213-003.",

year = "2002",

month = nov,

day = "1",

doi = "10.1016/S0039-6028(02)02208-2",

language = "English",

volume = "519",

pages = "150--156",

journal = "Surface Science",

issn = "0039-6028",

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number = "1-2",

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TY - JOUR

T1 - Adsorption and thermal decomposition of H2S on Si(100)

AU - Lai, Ying Huang

AU - Yeh, Chuin Tih

AU - Lin, Yi Hsin

AU - Hung, Wei Hsiu

N1 - Funding Information: This work was supported by SRRC and National Science Council under grant no. NSC91-2113-M-213-003.

PY - 2002/11/1

Y1 - 2002/11/1

N2 - Adsorption and thermal decomposition of H2S on Si(100)-2×1 are studied by means of temperature-programmed desorption (TPD) and X-ray photoemission spectroscopy (XPS) with synchrotron radiation. The H2S molecule dissociates to form H and HS on the Si surface at adsorption temperature of 115 K. The Si(100)-2×1 surface structure is conserved upon the adsorption of H2S due to bonding of dissociative H and HS on two Si atoms in a dimer without breaking the Si-Si dimer bond. H2 and SiS are the only desorption products of thermal decomposition of H2S with peaks at 780 and 820 K, respectively. On the basis of TPD and XPS results, intermediates involved in decomposition of H2S and their adsorption configurations are proposed and discussed.

AB - Adsorption and thermal decomposition of H2S on Si(100)-2×1 are studied by means of temperature-programmed desorption (TPD) and X-ray photoemission spectroscopy (XPS) with synchrotron radiation. The H2S molecule dissociates to form H and HS on the Si surface at adsorption temperature of 115 K. The Si(100)-2×1 surface structure is conserved upon the adsorption of H2S due to bonding of dissociative H and HS on two Si atoms in a dimer without breaking the Si-Si dimer bond. H2 and SiS are the only desorption products of thermal decomposition of H2S with peaks at 780 and 820 K, respectively. On the basis of TPD and XPS results, intermediates involved in decomposition of H2S and their adsorption configurations are proposed and discussed.

KW - Hydrogen sulphide

KW - Silicon

KW - Thermal desorption

KW - X-ray photoelectron spectroscopy

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U2 - 10.1016/S0039-6028(02)02208-2

DO - 10.1016/S0039-6028(02)02208-2

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VL - 519

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EP - 156

JO - Surface Science

JF - Surface Science

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