Abstract
The adsorption and thermal reaction of H2S on the InP(100) surface is studied by synchrotron radiation (SR) soft X-ray photoelectron spectroscopy. In addition to molecular adsorption, H2S decomposes to form the dissociative species of S, HS, and H on the surface at 100 K. The S atom of the sulfide species preferentially bonds to the In atom, and the H atom generated by the H2S dissociation bonds to the P atom. H2S molecules may physisorb on the surface in the form of an icelike multilayer/cluster at low temperatures, even at low coverages. The irradiation of SR white light can induce an alternative reaction of H2S with the InP surface to form a thicker sulfur layer than that obtained by thermal deposition. The resulting sulfur layer may provide chemical protection for the InP substrate from further reaction.
| Original language | English |
|---|---|
| Pages (from-to) | 3663-3668 |
| Number of pages | 6 |
| Journal | Journal of Physical Chemistry B |
| Volume | 103 |
| Issue number | 18 |
| DOIs | |
| Publication status | Published - 1999 May 6 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films
- Materials Chemistry