Adsorption and decomposition of H2S on InP(100)

Wei Hsiu Hung*, Hung Chih Chen, Che Chen Chang, Jyh Tsung Hsieh, Huey Liang Hwang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


The adsorption and thermal reaction of H2S on the InP(100) surface is studied by synchrotron radiation (SR) soft X-ray photoelectron spectroscopy. In addition to molecular adsorption, H2S decomposes to form the dissociative species of S, HS, and H on the surface at 100 K. The S atom of the sulfide species preferentially bonds to the In atom, and the H atom generated by the H2S dissociation bonds to the P atom. H2S molecules may physisorb on the surface in the form of an icelike multilayer/cluster at low temperatures, even at low coverages. The irradiation of SR white light can induce an alternative reaction of H2S with the InP surface to form a thicker sulfur layer than that obtained by thermal deposition. The resulting sulfur layer may provide chemical protection for the InP substrate from further reaction.

Original languageEnglish
Pages (from-to)3663-3668
Number of pages6
JournalJournal of Physical Chemistry B
Issue number18
Publication statusPublished - 1999 May 6
Externally publishedYes

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Materials Chemistry


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