Achieving high-scalability negative capacitance FETs with uniform Sub-35 mV/dec switch using dopant-free hafnium oxide and gate strain

Chia Chi Fan; Chun Hu Cheng; Chun Yuan Tu; Chien Liu; Wan Hsin Chen; Tun Jen Chang; Chun Yen Chang

doi:10.1109/VLSIT.2018.8510640

Achieving high-scalability negative capacitance FETs with uniform Sub-35 mV/dec switch using dopant-free hafnium oxide and gate strain

Chia Chi Fan, Chun Hu Cheng, Chun Yuan Tu, Chien Liu, Wan Hsin Chen, Tun Jen Chang, Chun Yen Chang

Department of Mechatronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

15 Citations (Scopus)

Abstract

For the first time, we successfully demonstrated that the 4-nm-thick dopant-free HfO₂ NCFETs using gate strain can implement an energy-efficient switch of a low gate overdrive voltage and a nearly hysteresis-free sub-40 mV/dec swing. The gate strain favorably rearranges oxygen vacancies and boosts orthorhombic phase transition. Furthermore, the dopant-free HfO₂ NCFET can be further improved by in-situ nitridation process. The 4-nm-thick nitrided HfO₂ NCFETs achieve a steep symmetric sub-35 mV/dec switch, a sustained sub-40 mV/dec SS distribution, and excellent stress immunity during NC switch. The high-scalability and dopant-free NCFET shows the great potential for the application of future highly-scaled 3D CMOS technology.

Original language	English
Title of host publication	2018 IEEE Symposium on VLSI Technology, VLSI Technology 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	139-140
Number of pages	2
ISBN (Electronic)	9781538642160
DOIs	https://doi.org/10.1109/VLSIT.2018.8510640
Publication status	Published - 2018 Oct 25
Event	38th IEEE Symposium on VLSI Technology, VLSI Technology 2018 - Honolulu, United States Duration: 2018 Jun 18 → 2018 Jun 22

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2018-June
ISSN (Print)	0743-1562

Other

Other	38th IEEE Symposium on VLSI Technology, VLSI Technology 2018
Country/Territory	United States
City	Honolulu
Period	2018/06/18 → 2018/06/22

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/VLSIT.2018.8510640

Cite this

Fan, C. C., Cheng, C. H., Tu, C. Y., Liu, C., Chen, W. H., Chang, T. J., & Chang, C. Y. (2018). Achieving high-scalability negative capacitance FETs with uniform Sub-35 mV/dec switch using dopant-free hafnium oxide and gate strain. In 2018 IEEE Symposium on VLSI Technology, VLSI Technology 2018 (pp. 139-140). Article 8510640 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2018-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.2018.8510640

Achieving high-scalability negative capacitance FETs with uniform Sub-35 mV/dec switch using dopant-free hafnium oxide and gate strain. / Fan, Chia Chi; Cheng, Chun Hu; Tu, Chun Yuan et al.
2018 IEEE Symposium on VLSI Technology, VLSI Technology 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 139-140 8510640 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2018-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fan, CC, Cheng, CH, Tu, CY, Liu, C, Chen, WH, Chang, TJ & Chang, CY 2018, Achieving high-scalability negative capacitance FETs with uniform Sub-35 mV/dec switch using dopant-free hafnium oxide and gate strain. in 2018 IEEE Symposium on VLSI Technology, VLSI Technology 2018., 8510640, Digest of Technical Papers - Symposium on VLSI Technology, vol. 2018-June, Institute of Electrical and Electronics Engineers Inc., pp. 139-140, 38th IEEE Symposium on VLSI Technology, VLSI Technology 2018, Honolulu, United States, 2018/06/18. https://doi.org/10.1109/VLSIT.2018.8510640

Fan CC, Cheng CH, Tu CY, Liu C, Chen WH, Chang TJ et al. Achieving high-scalability negative capacitance FETs with uniform Sub-35 mV/dec switch using dopant-free hafnium oxide and gate strain. In 2018 IEEE Symposium on VLSI Technology, VLSI Technology 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 139-140. 8510640. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.1109/VLSIT.2018.8510640

Fan, Chia Chi ; Cheng, Chun Hu ; Tu, Chun Yuan et al. / Achieving high-scalability negative capacitance FETs with uniform Sub-35 mV/dec switch using dopant-free hafnium oxide and gate strain. 2018 IEEE Symposium on VLSI Technology, VLSI Technology 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 139-140 (Digest of Technical Papers - Symposium on VLSI Technology).

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title = "Achieving high-scalability negative capacitance FETs with uniform Sub-35 mV/dec switch using dopant-free hafnium oxide and gate strain",

abstract = "For the first time, we successfully demonstrated that the 4-nm-thick dopant-free HfO2 NCFETs using gate strain can implement an energy-efficient switch of a low gate overdrive voltage and a nearly hysteresis-free sub-40 mV/dec swing. The gate strain favorably rearranges oxygen vacancies and boosts orthorhombic phase transition. Furthermore, the dopant-free HfO2 NCFET can be further improved by in-situ nitridation process. The 4-nm-thick nitrided HfO2 NCFETs achieve a steep symmetric sub-35 mV/dec switch, a sustained sub-40 mV/dec SS distribution, and excellent stress immunity during NC switch. The high-scalability and dopant-free NCFET shows the great potential for the application of future highly-scaled 3D CMOS technology.",

author = "Fan, {Chia Chi} and Cheng, {Chun Hu} and Tu, {Chun Yuan} and Chien Liu and Chen, {Wan Hsin} and Chang, {Tun Jen} and Chang, {Chun Yen}",

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AU - Chen, Wan Hsin

AU - Chang, Tun Jen

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N2 - For the first time, we successfully demonstrated that the 4-nm-thick dopant-free HfO2 NCFETs using gate strain can implement an energy-efficient switch of a low gate overdrive voltage and a nearly hysteresis-free sub-40 mV/dec swing. The gate strain favorably rearranges oxygen vacancies and boosts orthorhombic phase transition. Furthermore, the dopant-free HfO2 NCFET can be further improved by in-situ nitridation process. The 4-nm-thick nitrided HfO2 NCFETs achieve a steep symmetric sub-35 mV/dec switch, a sustained sub-40 mV/dec SS distribution, and excellent stress immunity during NC switch. The high-scalability and dopant-free NCFET shows the great potential for the application of future highly-scaled 3D CMOS technology.

AB - For the first time, we successfully demonstrated that the 4-nm-thick dopant-free HfO2 NCFETs using gate strain can implement an energy-efficient switch of a low gate overdrive voltage and a nearly hysteresis-free sub-40 mV/dec swing. The gate strain favorably rearranges oxygen vacancies and boosts orthorhombic phase transition. Furthermore, the dopant-free HfO2 NCFET can be further improved by in-situ nitridation process. The 4-nm-thick nitrided HfO2 NCFETs achieve a steep symmetric sub-35 mV/dec switch, a sustained sub-40 mV/dec SS distribution, and excellent stress immunity during NC switch. The high-scalability and dopant-free NCFET shows the great potential for the application of future highly-scaled 3D CMOS technology.

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Achieving high-scalability negative capacitance FETs with uniform Sub-35 mV/dec switch using dopant-free hafnium oxide and gate strain

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