A X-Band fully-integrated CMOS power amplifier using current combining technique

Jeng Han Tsai*, Wen Hung Liu, Po Chun Shen, Wang Lung Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A transformer-based current combining technique (CCT) are designed for X-band CMOS power amplifier (PA). A fully-integrated X-band PA adopting the transformer-based CCT is designed and implemented on 0.18-μm bulk CMOS technology. The X-band CMOS PA transmits saturation output power (Psat) of 27.3 dBm with 19 % of power-added efficiency (PAE) at 10.5 GHz and the output 1-dB compression point (OP1dB) is 23.84 dBm. To the author's knowledge, the PA using CCT is the first half-watt bulk CMOS PA with good power density above 10 GHz to date.

Original languageEnglish
Title of host publication2019 IEEE 8th Global Conference on Consumer Electronics, GCCE 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages411-412
Number of pages2
ISBN (Electronic)9781728135755
DOIs
Publication statusPublished - 2019 Oct
Event8th IEEE Global Conference on Consumer Electronics, GCCE 2019 - Osaka, Japan
Duration: 2019 Oct 152019 Oct 18

Publication series

Name2019 IEEE 8th Global Conference on Consumer Electronics, GCCE 2019

Conference

Conference8th IEEE Global Conference on Consumer Electronics, GCCE 2019
Country/TerritoryJapan
CityOsaka
Period2019/10/152019/10/18

Keywords

  • CMOS
  • Current combining technique (CCT)
  • Power amplifier (PA)
  • Transformer
  • X-band

ASJC Scopus subject areas

  • Instrumentation
  • Artificial Intelligence
  • Computer Networks and Communications
  • Computer Science Applications
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'A X-Band fully-integrated CMOS power amplifier using current combining technique'. Together they form a unique fingerprint.

Cite this