A X-Band fully-integrated CMOS power amplifier using current combining technique

Jeng Han Tsai; Wen Hung Liu; Po Chun Shen; Wang Lung Huang

doi:10.1109/GCCE46687.2019.9015629

A X-Band fully-integrated CMOS power amplifier using current combining technique

Jeng Han Tsai^*, Wen Hung Liu, Po Chun Shen, Wang Lung Huang

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A transformer-based current combining technique (CCT) are designed for X-band CMOS power amplifier (PA). A fully-integrated X-band PA adopting the transformer-based CCT is designed and implemented on 0.18-μm bulk CMOS technology. The X-band CMOS PA transmits saturation output power (P_sat) of 27.3 dBm with 19 % of power-added efficiency (PAE) at 10.5 GHz and the output 1-dB compression point (OP_1dB) is 23.84 dBm. To the author's knowledge, the PA using CCT is the first half-watt bulk CMOS PA with good power density above 10 GHz to date.

Original language	English
Title of host publication	2019 IEEE 8th Global Conference on Consumer Electronics, GCCE 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	411-412
Number of pages	2
ISBN (Electronic)	9781728135755
DOIs	https://doi.org/10.1109/GCCE46687.2019.9015629
Publication status	Published - 2019 Oct
Event	8th IEEE Global Conference on Consumer Electronics, GCCE 2019 - Osaka, Japan Duration: 2019 Oct 15 → 2019 Oct 18

Publication series

Name	2019 IEEE 8th Global Conference on Consumer Electronics, GCCE 2019

Conference

Conference	8th IEEE Global Conference on Consumer Electronics, GCCE 2019
Country/Territory	Japan
City	Osaka
Period	2019/10/15 → 2019/10/18

Keywords

CMOS
Current combining technique (CCT)
Power amplifier (PA)
Transformer
X-band

ASJC Scopus subject areas

Instrumentation
Artificial Intelligence
Computer Networks and Communications
Computer Science Applications
Electrical and Electronic Engineering

Access to Document

10.1109/GCCE46687.2019.9015629

Cite this

Tsai, J. H., Liu, W. H., Shen, P. C., & Huang, W. L. (2019). A X-Band fully-integrated CMOS power amplifier using current combining technique. In 2019 IEEE 8th Global Conference on Consumer Electronics, GCCE 2019 (pp. 411-412). [9015629] (2019 IEEE 8th Global Conference on Consumer Electronics, GCCE 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/GCCE46687.2019.9015629

A X-Band fully-integrated CMOS power amplifier using current combining technique. / Tsai, Jeng Han; Liu, Wen Hung; Shen, Po Chun et al.
2019 IEEE 8th Global Conference on Consumer Electronics, GCCE 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 411-412 9015629 (2019 IEEE 8th Global Conference on Consumer Electronics, GCCE 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tsai, JH, Liu, WH, Shen, PC & Huang, WL 2019, A X-Band fully-integrated CMOS power amplifier using current combining technique. in 2019 IEEE 8th Global Conference on Consumer Electronics, GCCE 2019., 9015629, 2019 IEEE 8th Global Conference on Consumer Electronics, GCCE 2019, Institute of Electrical and Electronics Engineers Inc., pp. 411-412, 8th IEEE Global Conference on Consumer Electronics, GCCE 2019, Osaka, Japan, 2019/10/15. https://doi.org/10.1109/GCCE46687.2019.9015629

Tsai JH, Liu WH, Shen PC, Huang WL. A X-Band fully-integrated CMOS power amplifier using current combining technique. In 2019 IEEE 8th Global Conference on Consumer Electronics, GCCE 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 411-412. 9015629. (2019 IEEE 8th Global Conference on Consumer Electronics, GCCE 2019). doi: 10.1109/GCCE46687.2019.9015629

@inproceedings{0ff5bec83b3d41609a5c205bec0277fc,

title = "A X-Band fully-integrated CMOS power amplifier using current combining technique",

abstract = "A transformer-based current combining technique (CCT) are designed for X-band CMOS power amplifier (PA). A fully-integrated X-band PA adopting the transformer-based CCT is designed and implemented on 0.18-μm bulk CMOS technology. The X-band CMOS PA transmits saturation output power (Psat) of 27.3 dBm with 19 % of power-added efficiency (PAE) at 10.5 GHz and the output 1-dB compression point (OP1dB) is 23.84 dBm. To the author's knowledge, the PA using CCT is the first half-watt bulk CMOS PA with good power density above 10 GHz to date.",

keywords = "CMOS, Current combining technique (CCT), Power amplifier (PA), Transformer, X-band",

author = "Tsai, {Jeng Han} and Liu, {Wen Hung} and Shen, {Po Chun} and Huang, {Wang Lung}",

note = "Funding Information: ACKNOWLEDGMENT This work was supported in part by the Ministry of Science and Technology of Taiwan under Grant MOST 107-2221-E-003-003 and MOST 107-2221-E-003-004-MY2. The chips were fabricated by Taiwan Semiconductor Manufacturing Company (TSMC) through the Taiwan Semiconductor Research Institute (TSRI), Hsinchu, Taiwan. Funding Information: This work was supported in part by the Ministry of Science and Technology of Taiwan under Grant MOST 107-2221-E-003-003 and MOST 107-2221-E-003-004-MY2. The chips were fabricated by Taiwan Semiconductor Manufacturing Company (TSMC) through the Taiwan Semiconductor Research Institute (TSRI), Hsinchu, Taiwan. Publisher Copyright: {\textcopyright} 2019 IEEE.; 8th IEEE Global Conference on Consumer Electronics, GCCE 2019 ; Conference date: 15-10-2019 Through 18-10-2019",

year = "2019",

month = oct,

doi = "10.1109/GCCE46687.2019.9015629",

language = "English",

series = "2019 IEEE 8th Global Conference on Consumer Electronics, GCCE 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "411--412",

booktitle = "2019 IEEE 8th Global Conference on Consumer Electronics, GCCE 2019",

}

TY - GEN

T1 - A X-Band fully-integrated CMOS power amplifier using current combining technique

AU - Tsai, Jeng Han

AU - Liu, Wen Hung

AU - Shen, Po Chun

AU - Huang, Wang Lung

N1 - Funding Information: ACKNOWLEDGMENT This work was supported in part by the Ministry of Science and Technology of Taiwan under Grant MOST 107-2221-E-003-003 and MOST 107-2221-E-003-004-MY2. The chips were fabricated by Taiwan Semiconductor Manufacturing Company (TSMC) through the Taiwan Semiconductor Research Institute (TSRI), Hsinchu, Taiwan. Funding Information: This work was supported in part by the Ministry of Science and Technology of Taiwan under Grant MOST 107-2221-E-003-003 and MOST 107-2221-E-003-004-MY2. The chips were fabricated by Taiwan Semiconductor Manufacturing Company (TSMC) through the Taiwan Semiconductor Research Institute (TSRI), Hsinchu, Taiwan. Publisher Copyright: © 2019 IEEE.

PY - 2019/10

Y1 - 2019/10

N2 - A transformer-based current combining technique (CCT) are designed for X-band CMOS power amplifier (PA). A fully-integrated X-band PA adopting the transformer-based CCT is designed and implemented on 0.18-μm bulk CMOS technology. The X-band CMOS PA transmits saturation output power (Psat) of 27.3 dBm with 19 % of power-added efficiency (PAE) at 10.5 GHz and the output 1-dB compression point (OP1dB) is 23.84 dBm. To the author's knowledge, the PA using CCT is the first half-watt bulk CMOS PA with good power density above 10 GHz to date.

AB - A transformer-based current combining technique (CCT) are designed for X-band CMOS power amplifier (PA). A fully-integrated X-band PA adopting the transformer-based CCT is designed and implemented on 0.18-μm bulk CMOS technology. The X-band CMOS PA transmits saturation output power (Psat) of 27.3 dBm with 19 % of power-added efficiency (PAE) at 10.5 GHz and the output 1-dB compression point (OP1dB) is 23.84 dBm. To the author's knowledge, the PA using CCT is the first half-watt bulk CMOS PA with good power density above 10 GHz to date.

KW - CMOS

KW - Current combining technique (CCT)

KW - Power amplifier (PA)

KW - Transformer

KW - X-band

UR - http://www.scopus.com/inward/record.url?scp=85081985991&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85081985991&partnerID=8YFLogxK

U2 - 10.1109/GCCE46687.2019.9015629

DO - 10.1109/GCCE46687.2019.9015629

M3 - Conference contribution

AN - SCOPUS:85081985991

T3 - 2019 IEEE 8th Global Conference on Consumer Electronics, GCCE 2019

SP - 411

EP - 412

BT - 2019 IEEE 8th Global Conference on Consumer Electronics, GCCE 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 8th IEEE Global Conference on Consumer Electronics, GCCE 2019

Y2 - 15 October 2019 through 18 October 2019

ER -

A X-Band fully-integrated CMOS power amplifier using current combining technique

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this