A X-Band fully-integrated CMOS power amplifier using current combining technique

Jeng Han Tsai; Wen Hung Liu; Po Chun Shen; Wang Lung Huang

doi:10.1109/GCCE46687.2019.9015629

A X-Band fully-integrated CMOS power amplifier using current combining technique

Jeng Han Tsai^*, Wen Hung Liu, Po Chun Shen, Wang Lung Huang

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A transformer-based current combining technique (CCT) are designed for X-band CMOS power amplifier (PA). A fully-integrated X-band PA adopting the transformer-based CCT is designed and implemented on 0.18-μm bulk CMOS technology. The X-band CMOS PA transmits saturation output power (P_sat) of 27.3 dBm with 19 % of power-added efficiency (PAE) at 10.5 GHz and the output 1-dB compression point (OP_1dB) is 23.84 dBm. To the author's knowledge, the PA using CCT is the first half-watt bulk CMOS PA with good power density above 10 GHz to date.

Original language	English
Title of host publication	2019 IEEE 8th Global Conference on Consumer Electronics, GCCE 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	411-412
Number of pages	2
ISBN (Electronic)	9781728135755
DOIs	https://doi.org/10.1109/GCCE46687.2019.9015629
Publication status	Published - 2019 Oct
Event	8th IEEE Global Conference on Consumer Electronics, GCCE 2019 - Osaka, Japan Duration: 2019 Oct 15 → 2019 Oct 18

Publication series

Name	2019 IEEE 8th Global Conference on Consumer Electronics, GCCE 2019

Conference

Conference	8th IEEE Global Conference on Consumer Electronics, GCCE 2019
Country/Territory	Japan
City	Osaka
Period	2019/10/15 → 2019/10/18

Keywords

CMOS
Current combining technique (CCT)
Power amplifier (PA)
Transformer
X-band

ASJC Scopus subject areas

Instrumentation
Artificial Intelligence
Computer Networks and Communications
Computer Science Applications
Electrical and Electronic Engineering

Access to Document

10.1109/GCCE46687.2019.9015629

Cite this

Tsai, J. H., Liu, W. H., Shen, P. C., & Huang, W. L. (2019). A X-Band fully-integrated CMOS power amplifier using current combining technique. In 2019 IEEE 8th Global Conference on Consumer Electronics, GCCE 2019 (pp. 411-412). Article 9015629 (2019 IEEE 8th Global Conference on Consumer Electronics, GCCE 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/GCCE46687.2019.9015629

A X-Band fully-integrated CMOS power amplifier using current combining technique. / Tsai, Jeng Han; Liu, Wen Hung; Shen, Po Chun et al.
2019 IEEE 8th Global Conference on Consumer Electronics, GCCE 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 411-412 9015629 (2019 IEEE 8th Global Conference on Consumer Electronics, GCCE 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tsai, JH, Liu, WH, Shen, PC & Huang, WL 2019, A X-Band fully-integrated CMOS power amplifier using current combining technique. in 2019 IEEE 8th Global Conference on Consumer Electronics, GCCE 2019., 9015629, 2019 IEEE 8th Global Conference on Consumer Electronics, GCCE 2019, Institute of Electrical and Electronics Engineers Inc., pp. 411-412, 8th IEEE Global Conference on Consumer Electronics, GCCE 2019, Osaka, Japan, 2019/10/15. https://doi.org/10.1109/GCCE46687.2019.9015629

Tsai JH, Liu WH, Shen PC, Huang WL. A X-Band fully-integrated CMOS power amplifier using current combining technique. In 2019 IEEE 8th Global Conference on Consumer Electronics, GCCE 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 411-412. 9015629. (2019 IEEE 8th Global Conference on Consumer Electronics, GCCE 2019). doi: 10.1109/GCCE46687.2019.9015629

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abstract = "A transformer-based current combining technique (CCT) are designed for X-band CMOS power amplifier (PA). A fully-integrated X-band PA adopting the transformer-based CCT is designed and implemented on 0.18-μm bulk CMOS technology. The X-band CMOS PA transmits saturation output power (Psat) of 27.3 dBm with 19 % of power-added efficiency (PAE) at 10.5 GHz and the output 1-dB compression point (OP1dB) is 23.84 dBm. To the author's knowledge, the PA using CCT is the first half-watt bulk CMOS PA with good power density above 10 GHz to date.",

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A X-Band fully-integrated CMOS power amplifier using current combining technique

Abstract

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Keywords

ASJC Scopus subject areas

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