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A World First QLC RRAM: Highly Reliable Resistive-Gate Flash with Record 108Endurance and Excellent Retention

  • M. Y. Li
  • , J. P. Lee
  • , C. H. Liu
  • , J. C. Guo
  • , Steve S. Chung*
    • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3   Link opens in a new tab Citations (Scopus)

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