A W-band medium power amplifier in 90 nm CMOS

Yu Sian Jiang; Jeng Han Tsai; Huei Wang

doi:10.1109/LMWC.2008.2007712

A W-band medium power amplifier in 90 nm CMOS

Yu Sian Jiang^*
, Jeng Han Tsai
, Huei Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

50 Citations (Scopus)

Abstract

A W-band CMOS medium power amplifier (PA) is presented in this letter. The circuit is implemented in 90 nm mixed signal/radio frequency CMOS process. By utilizing balanced architecture, the PA demonstrated a measured maximum small signal gain of 17 dB with 3 dB bandwidth from 91 to 108 GHz. The saturation output power (P_sat) is 12 dBm between 90 and 100 GHz for V _ds of each transistor at 1.5 V. To our knowledge, this is the highest frequency CMOS PA to date.

Original language	English
Article number	4686756
Pages (from-to)	818-820
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	18
Issue number	12
DOIs	https://doi.org/10.1109/LMWC.2008.2007712
Publication status	Published - 2008 Dec
Externally published	Yes

Keywords

CMOS
Microwave monolithic integrated circuit (MMIC)
Power amplifier (PA)
W-band

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/LMWC.2008.2007712

Cite this

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title = "A W-band medium power amplifier in 90 nm CMOS",

abstract = "A W-band CMOS medium power amplifier (PA) is presented in this letter. The circuit is implemented in 90 nm mixed signal/radio frequency CMOS process. By utilizing balanced architecture, the PA demonstrated a measured maximum small signal gain of 17 dB with 3 dB bandwidth from 91 to 108 GHz. The saturation output power (Psat) is 12 dBm between 90 and 100 GHz for V ds of each transistor at 1.5 V. To our knowledge, this is the highest frequency CMOS PA to date.",

keywords = "CMOS, Microwave monolithic integrated circuit (MMIC), Power amplifier (PA), W-band",

author = "Jiang, \{Yu Sian\} and Tsai, \{Jeng Han\} and Huei Wang",

note = "Funding Information: Manuscript received May 29, 2008; revised August 13, 2008. Current version published December 04, 2008. This work was supported in part by the TSMC-NTU JDP Project, the National Science Council, and Ministry of Education, Taiwan, R.O.C.. (Projects NSC 96-2752-E-002-003-PAE, NSC 96-2219-E-002-015, NSC 96-2219-E-002-020, and 95R0062-AE00-00).",

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doi = "10.1109/LMWC.2008.2007712",

language = "English",

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AU - Tsai, Jeng Han

AU - Wang, Huei

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PY - 2008/12

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N2 - A W-band CMOS medium power amplifier (PA) is presented in this letter. The circuit is implemented in 90 nm mixed signal/radio frequency CMOS process. By utilizing balanced architecture, the PA demonstrated a measured maximum small signal gain of 17 dB with 3 dB bandwidth from 91 to 108 GHz. The saturation output power (Psat) is 12 dBm between 90 and 100 GHz for V ds of each transistor at 1.5 V. To our knowledge, this is the highest frequency CMOS PA to date.

AB - A W-band CMOS medium power amplifier (PA) is presented in this letter. The circuit is implemented in 90 nm mixed signal/radio frequency CMOS process. By utilizing balanced architecture, the PA demonstrated a measured maximum small signal gain of 17 dB with 3 dB bandwidth from 91 to 108 GHz. The saturation output power (Psat) is 12 dBm between 90 and 100 GHz for V ds of each transistor at 1.5 V. To our knowledge, this is the highest frequency CMOS PA to date.

KW - CMOS

KW - Microwave monolithic integrated circuit (MMIC)

KW - Power amplifier (PA)

KW - W-band

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JF - IEEE Microwave and Wireless Components Letters

IS - 12

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A W-band medium power amplifier in 90 nm CMOS

Abstract

Keywords

ASJC Scopus subject areas

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