A W-band medium power amplifier in 90 nm CMOS

Yu Sian Jiang*, Jeng Han Tsai, Huei Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

48 Citations (Scopus)


A W-band CMOS medium power amplifier (PA) is presented in this letter. The circuit is implemented in 90 nm mixed signal/radio frequency CMOS process. By utilizing balanced architecture, the PA demonstrated a measured maximum small signal gain of 17 dB with 3 dB bandwidth from 91 to 108 GHz. The saturation output power (Psat) is 12 dBm between 90 and 100 GHz for V ds of each transistor at 1.5 V. To our knowledge, this is the highest frequency CMOS PA to date.

Original languageEnglish
Article number4686756
Pages (from-to)818-820
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Issue number12
Publication statusPublished - 2008 Dec
Externally publishedYes


  • CMOS
  • Microwave monolithic integrated circuit (MMIC)
  • Power amplifier (PA)
  • W-band

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


Dive into the research topics of 'A W-band medium power amplifier in 90 nm CMOS'. Together they form a unique fingerprint.

Cite this