@inproceedings{92abcf29b16945f6a4d3b1f4c89eb167,
title = "A v-band fully-integrated CMOS distributed active transformer power amplifier for 802.15.TG3c wireless personal area network applications",
abstract = "A 60- GHz fully-integrated and broadband distributed active transformer (DAT) power amplifier (PA) is implemented in 90-nm CMOS technology. The PA performs a flat small signal gain of 26 ± 1 dB from 57 to 69 GHz which covers full band for 60-GHz wireless personal network (WPAN) applications. By using the DAT output combine structure, this PA delivers 18-dBm measured output power with 12.2% PAE at 60 GHz with a compact chip size. To the best of our knowledge, this DAT CMOS PA demonstrates the highest output power among the reported 60-GHz CMOS Pas to date.",
keywords = "CMOS, DAT, Fully-integrated, Power amplifier, V-band",
author = "Jen, {Yung Nien} and Tsai, {Jeng Han} and Huang, {Tian Wei} and Huei Wang",
year = "2008",
doi = "10.1109/CSICS.2008.31",
language = "English",
isbn = "9781424419401",
series = "2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, Technical Digest 2008",
booktitle = "2008 IEEE CSIC Symposium",
note = "2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, 2008 ; Conference date: 12-10-2008 Through 15-10-2008",
}