A v-band fully-integrated CMOS distributed active transformer power amplifier for 802.15.TG3c wireless personal area network applications

Yung Nien Jen*, Jeng Han Tsai, Tian Wei Huang, Huei Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

A 60- GHz fully-integrated and broadband distributed active transformer (DAT) power amplifier (PA) is implemented in 90-nm CMOS technology. The PA performs a flat small signal gain of 26 ± 1 dB from 57 to 69 GHz which covers full band for 60-GHz wireless personal network (WPAN) applications. By using the DAT output combine structure, this PA delivers 18-dBm measured output power with 12.2% PAE at 60 GHz with a compact chip size. To the best of our knowledge, this DAT CMOS PA demonstrates the highest output power among the reported 60-GHz CMOS Pas to date.

Original languageEnglish
Title of host publication2008 IEEE CSIC Symposium
Subtitle of host publicationGaAs ICs Celebrate 30 Years in Monterey, Technical Digest 2008
DOIs
Publication statusPublished - 2008
Externally publishedYes
Event2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, 2008 - Monterey, CA, United States
Duration: 2008 Oct 122008 Oct 15

Publication series

Name2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, Technical Digest 2008

Other

Other2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, 2008
Country/TerritoryUnited States
CityMonterey, CA
Period2008/10/122008/10/15

Keywords

  • CMOS
  • DAT
  • Fully-integrated
  • Power amplifier
  • V-band

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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