A Sub-1V Fourth-Order Bandpass Delta-Sigma Modulator

Hsiang Hui Chang; Chien Hung Kuo; Ming Huang Liu; Shen Iuan Liu

doi:10.1023/A:1026265624740

A Sub-1V Fourth-Order Bandpass Delta-Sigma Modulator

Hsiang Hui Chang^*, Chien Hung Kuo, Ming Huang Liu, Shen Iuan Liu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

A sub-1V fourth-order bandpass delta-sigma modulator is presented in this paper. Using the switched opamp technique enables the modulator to operate at only 0.8 V supply voltage without using voltage multipliers or bootstrapping switches. A two-path structure is applied to relax the settling requirement. Implemented in a 0.25-μm one-poly, five-metal standard CMOS process, the prototype modulator exhibits a signal-to-noise-plus-distortion ratio (SNDR) of 58.2 db and a dynamic range (DR) of 64 db in a 60 KHz signal bandwidth centered at 1.25 MHz while consuming 2.5 mW and occupying an active area of 2.11 mm ².

Original language	English
Pages (from-to)	179-189
Number of pages	11
Journal	Analog Integrated Circuits and Signal Processing
Volume	37
Issue number	3
DOIs	https://doi.org/10.1023/A:1026265624740
Publication status	Published - 2003 Dec
Externally published	Yes

Keywords

Bandpass delta-sigma modulator
Low-voltage
Switched-capacitor
Two-path structure

ASJC Scopus subject areas

Signal Processing
Hardware and Architecture
Surfaces, Coatings and Films

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Cite this

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abstract = "A sub-1V fourth-order bandpass delta-sigma modulator is presented in this paper. Using the switched opamp technique enables the modulator to operate at only 0.8 V supply voltage without using voltage multipliers or bootstrapping switches. A two-path structure is applied to relax the settling requirement. Implemented in a 0.25-μm one-poly, five-metal standard CMOS process, the prototype modulator exhibits a signal-to-noise-plus-distortion ratio (SNDR) of 58.2 db and a dynamic range (DR) of 64 db in a 60 KHz signal bandwidth centered at 1.25 MHz while consuming 2.5 mW and occupying an active area of 2.11 mm 2.",

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AU - Chang, Hsiang Hui

AU - Kuo, Chien Hung

AU - Liu, Ming Huang

AU - Liu, Shen Iuan

PY - 2003/12

Y1 - 2003/12

N2 - A sub-1V fourth-order bandpass delta-sigma modulator is presented in this paper. Using the switched opamp technique enables the modulator to operate at only 0.8 V supply voltage without using voltage multipliers or bootstrapping switches. A two-path structure is applied to relax the settling requirement. Implemented in a 0.25-μm one-poly, five-metal standard CMOS process, the prototype modulator exhibits a signal-to-noise-plus-distortion ratio (SNDR) of 58.2 db and a dynamic range (DR) of 64 db in a 60 KHz signal bandwidth centered at 1.25 MHz while consuming 2.5 mW and occupying an active area of 2.11 mm 2.

AB - A sub-1V fourth-order bandpass delta-sigma modulator is presented in this paper. Using the switched opamp technique enables the modulator to operate at only 0.8 V supply voltage without using voltage multipliers or bootstrapping switches. A two-path structure is applied to relax the settling requirement. Implemented in a 0.25-μm one-poly, five-metal standard CMOS process, the prototype modulator exhibits a signal-to-noise-plus-distortion ratio (SNDR) of 58.2 db and a dynamic range (DR) of 64 db in a 60 KHz signal bandwidth centered at 1.25 MHz while consuming 2.5 mW and occupying an active area of 2.11 mm 2.

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KW - Low-voltage

KW - Switched-capacitor

KW - Two-path structure

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A Sub-1V Fourth-Order Bandpass Delta-Sigma Modulator

Abstract

Keywords

ASJC Scopus subject areas

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