A Sub-1V Fourth-Order Bandpass Delta-Sigma Modulator

Hsiang Hui Chang*, Chien Hung Kuo, Ming Huang Liu, Shen Iuan Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


A sub-1V fourth-order bandpass delta-sigma modulator is presented in this paper. Using the switched opamp technique enables the modulator to operate at only 0.8 V supply voltage without using voltage multipliers or bootstrapping switches. A two-path structure is applied to relax the settling requirement. Implemented in a 0.25-μm one-poly, five-metal standard CMOS process, the prototype modulator exhibits a signal-to-noise-plus-distortion ratio (SNDR) of 58.2 db and a dynamic range (DR) of 64 db in a 60 KHz signal bandwidth centered at 1.25 MHz while consuming 2.5 mW and occupying an active area of 2.11 mm 2.

Original languageEnglish
Pages (from-to)179-189
Number of pages11
JournalAnalog Integrated Circuits and Signal Processing
Issue number3
Publication statusPublished - 2003 Dec
Externally publishedYes


  • Bandpass delta-sigma modulator
  • Low-voltage
  • Switched-capacitor
  • Two-path structure

ASJC Scopus subject areas

  • Signal Processing
  • Hardware and Architecture
  • Surfaces, Coatings and Films


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