A standard and reliable method to fabricate two-dimensional nanoelectronics

Kristan Bryan C. Simbulan, Po Chun Chen, Yun Yan Lin, Yann Wen Lan

Research output: Contribution to journalArticle

Abstract

Two-dimensional (2D) materials have attracted huge attention due to their unique properties and potential applications. Since wafer scale synthesis of 2D materials is still in nascent stages, scientists cannot fully rely on traditional semiconductor techniques for related research. Delicate processes from locating the materials to electrode definition need to be well controlled. In this article, a universal fabrication protocol required in manufacturing nanoscale electronics, such as 2D quasi-heterojunction bipolar transistors (Q-HBT), and 2D back-gated transistors are demonstrated. This protocol includes the determination of material position, electron beam lithography (EBL), metal electrode definition, et al. A step by step narrative of the fabrication procedures for these devices are also presented. Furthermore, results show that each of the fabricated devices has achieved high performance with high repeatability. This work reveals a comprehensive description of process flow for preparing 2D nano-electronics, enables the research groups to access this information, and pave the way toward future electronics.

Original languageEnglish
Article numbere57885
JournalJournal of Visualized Experiments
Volume2018
Issue number138
DOIs
Publication statusPublished - 2018 Aug 28

Keywords

  • Electron beam lithography
  • Engineering
  • Fabrication
  • Issue 138
  • Nanoelectronics
  • Standard process
  • Transition metal dichalcogenides
  • Two-dimensional materials

ASJC Scopus subject areas

  • Neuroscience(all)
  • Chemical Engineering(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Immunology and Microbiology(all)

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