A simple method to fabricate single electron devices

Yi Pin Fang, Ya Chang Chou, Shu Fen Hu, Gwo Jen Hwang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A simple method, based on overlapping the dosage distribution of the discretely electron beam written nano-dots, was employed to fabricate nano-structure containing narrow constrictions. From the appropriately designed electron beam process, the electron dosage in the overlapping region is just above the threshold exposure dosage of the negative electronbeam resist. A Si-based nano-dot with two narrow tunnel junctions called single electron transistor was formed after dry etching and thermal oxidation process since the overlapping region is much narrower than the diameter of the nano-dot. The electric characteristic of the SET was found to be consistent with the expected behavior of electron transport through a gated quantum dot. Also, The characteristic phase diagrams of double dot structure were obtained by independently sweeping two gates. The honeycomb lattice of the conductance resonances in the phase diagram was modeled using a capacitance equivalent circuit and the electronic behavior of the double dot device was discussed from measured charging diagram comparing with the model.

Original languageEnglish
Title of host publication2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW
Pages83-86
Number of pages4
Publication statusPublished - 2004 Dec 1
Event2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW - , Taiwan
Duration: 2004 Sep 92004 Sep 10

Publication series

Name2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW

Other

Other2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW
CountryTaiwan
Period04/9/904/9/10

Fingerprint

Electron devices
Phase diagrams
Electron beams
Single electron transistors
Dry etching
Tunnel junctions
Equivalent circuits
Semiconductor quantum dots
Capacitance
Oxidation
Electrons
Hot Temperature
Electron Transport

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Fang, Y. P., Chou, Y. C., Hu, S. F., & Hwang, G. J. (2004). A simple method to fabricate single electron devices. In 2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW (pp. 83-86). (2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW).

A simple method to fabricate single electron devices. / Fang, Yi Pin; Chou, Ya Chang; Hu, Shu Fen; Hwang, Gwo Jen.

2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW. 2004. p. 83-86 (2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fang, YP, Chou, YC, Hu, SF & Hwang, GJ 2004, A simple method to fabricate single electron devices. in 2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW. 2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW, pp. 83-86, 2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW, Taiwan, 04/9/9.
Fang YP, Chou YC, Hu SF, Hwang GJ. A simple method to fabricate single electron devices. In 2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW. 2004. p. 83-86. (2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW).
Fang, Yi Pin ; Chou, Ya Chang ; Hu, Shu Fen ; Hwang, Gwo Jen. / A simple method to fabricate single electron devices. 2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW. 2004. pp. 83-86 (2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW).
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