A simple method for fabricating silicon single electron devices for metrology applications

G. J. Hwang; C. F. Huang; Y. P. Fang; Y. C. Chou; S. F. Hu

doi:10.1109/CPEM.2004.305355

A simple method for fabricating silicon single electron devices for metrology applications

G. J. Hwang, C. F. Huang, Y. P. Fang, Y. C. Chou, S. F. Hu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A simple method, based on overlapping the dosage distribution of the discretely electron beam written nanodots, was employed to fabricate silicon single electron transistor. The electronic characteristics of fabricated Si-based SET were analyzed, and found to be consistent with the expected behavior of electron transport through a gated quantum dot.

Original language	English
Title of host publication	2004 Conference on Precision Electromagnetic Measurements Digest, CPEM 2004
Pages	548-549
Number of pages	2
DOIs	https://doi.org/10.1109/CPEM.2004.305355
Publication status	Published - 2004
Externally published	Yes
Event	2004 Conference on Precision Electromagnetic Measurements Digest, CPEM 2004 - London, United Kingdom Duration: 2004 Jun 27 → 2004 Jul 2

Publication series

Name	CPEM Digest (Conference on Precision Electromagnetic Measurements)
ISSN (Print)	0589-1485

Other

Other	2004 Conference on Precision Electromagnetic Measurements Digest, CPEM 2004
Country/Territory	United Kingdom
City	London
Period	2004/06/27 → 2004/07/02

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Electrical and Electronic Engineering

Access to Document

10.1109/CPEM.2004.305355

Cite this

Hwang, G. J., Huang, C. F., Fang, Y. P., Chou, Y. C., & Hu, S. F. (2004). A simple method for fabricating silicon single electron devices for metrology applications. In 2004 Conference on Precision Electromagnetic Measurements Digest, CPEM 2004 (pp. 548-549). Article 4097366 (CPEM Digest (Conference on Precision Electromagnetic Measurements)). https://doi.org/10.1109/CPEM.2004.305355

A simple method for fabricating silicon single electron devices for metrology applications. / Hwang, G. J.; Huang, C. F.; Fang, Y. P. et al.
2004 Conference on Precision Electromagnetic Measurements Digest, CPEM 2004. 2004. p. 548-549 4097366 (CPEM Digest (Conference on Precision Electromagnetic Measurements)).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hwang, GJ, Huang, CF, Fang, YP, Chou, YC & Hu, SF 2004, A simple method for fabricating silicon single electron devices for metrology applications. in 2004 Conference on Precision Electromagnetic Measurements Digest, CPEM 2004., 4097366, CPEM Digest (Conference on Precision Electromagnetic Measurements), pp. 548-549, 2004 Conference on Precision Electromagnetic Measurements Digest, CPEM 2004, London, United Kingdom, 2004/06/27. https://doi.org/10.1109/CPEM.2004.305355

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abstract = "A simple method, based on overlapping the dosage distribution of the discretely electron beam written nanodots, was employed to fabricate silicon single electron transistor. The electronic characteristics of fabricated Si-based SET were analyzed, and found to be consistent with the expected behavior of electron transport through a gated quantum dot.",

author = "Hwang, {G. J.} and Huang, {C. F.} and Fang, {Y. P.} and Chou, {Y. C.} and Hu, {S. F.}",

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AB - A simple method, based on overlapping the dosage distribution of the discretely electron beam written nanodots, was employed to fabricate silicon single electron transistor. The electronic characteristics of fabricated Si-based SET were analyzed, and found to be consistent with the expected behavior of electron transport through a gated quantum dot.

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ER -

A simple method for fabricating silicon single electron devices for metrology applications

Abstract

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Other

ASJC Scopus subject areas

Access to Document

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