A simple method for fabricating silicon single electron devices for metrology applications

G. J. Hwang, C. F. Huang, Y. P. Fang, Y. C. Chou, Shu-Fen Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A simple method, based on overlapping the dosage distribution of the discretely electron beam written nanodots, was employed to fabricate silicon single electron transistor. The electronic characteristics of fabricated Si-based SET were analyzed, and found to be consistent with the expected behavior of electron transport through a gated quantum dot.

Original languageEnglish
Title of host publication2004 Conference on Precision Electromagnetic Measurements Digest, CPEM 2004
Pages548-549
Number of pages2
DOIs
Publication statusPublished - 2004 Dec 1
Event2004 Conference on Precision Electromagnetic Measurements Digest, CPEM 2004 - London, United Kingdom
Duration: 2004 Jun 272004 Jul 2

Publication series

NameCPEM Digest (Conference on Precision Electromagnetic Measurements)
ISSN (Print)0589-1485

Other

Other2004 Conference on Precision Electromagnetic Measurements Digest, CPEM 2004
CountryUnited Kingdom
CityLondon
Period04/6/2704/7/2

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Electrical and Electronic Engineering

Cite this

Hwang, G. J., Huang, C. F., Fang, Y. P., Chou, Y. C., & Hu, S-F. (2004). A simple method for fabricating silicon single electron devices for metrology applications. In 2004 Conference on Precision Electromagnetic Measurements Digest, CPEM 2004 (pp. 548-549). [4097366] (CPEM Digest (Conference on Precision Electromagnetic Measurements)). https://doi.org/10.1109/CPEM.2004.305355