A simple approach toward quantitative phase field simulation for dilute-alloy solidification

C. J. Shih, M. H. Lee, C. W. Lan

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We present a simple approach that could help quantitative phase field simulation for dilute-alloy solidification. The proposed approach mends the solute trapping problem by using a simple interface model (SIM), which requires only one free parameter. To test the feasibility of this model, a free dendritic growth from a small nucleus is simulated, and a good agreement with the anti-trapping current (ATC) model [Karma, Phys. Rev. Lett. 87 (2001) 115701] is obtained. By further studying the solute trapping effect during directional solidification, we find that the results give, with this model, a good thermodynamic consistence without solute trapping over two-order increment of the solidification speed and the interface thickness. Good agreement with the classical theory is obtained as well.

Original languageEnglish
Pages (from-to)515-524
Number of pages10
JournalJournal of Crystal Growth
Volume282
Issue number3-4
DOIs
Publication statusPublished - 2005 Sep 1

Keywords

  • A1. Adaptive phase field simulations
  • A1. Interface model
  • A1. Solidification
  • A1. Solute trapping

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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