A silicon nanowire with a Coulomb blockade effect at room temperature

S. F. Hu; W. Z. Wong; S. S. Liu; Y. C. Wu; C. L. Sung; T. Y. Huang; T. J. Yang

doi:10.1002/1521-4095(20020517)14:10<736::AID-ADMA736>3.0.CO;2-9

A silicon nanowire with a Coulomb blockade effect at room temperature

S. F. Hu, W. Z. Wong, S. S. Liu, Y. C. Wu, C. L. Sung, T. Y. Huang, T. J. Yang

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

An extremely narrow and thin silicon wire has been fabricated on a silicon-on-insulator wafer (see Figure). The room-temperature Coulomb blockade effects as well as the influence of a capacitively coupled gate on the transport properties of this conducting silicon quantum wire are studied. The results obtained are encouraging for the application of such wires in single-electron transistors.

Original language	English
Pages (from-to)	736-739
Number of pages	4
Journal	Advanced Materials
Volume	14
Issue number	10
DOIs	https://doi.org/10.1002/1521-4095(20020517)14:10<736::AID-ADMA736>3.0.CO;2-9
Publication status	Published - 2002 May 17
Externally published	Yes

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/1521-4095(20020517)14:10<736::AID-ADMA736>3.0.CO;2-9

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@article{fadaca38d6b14274a1cbb90e2a11ad26,

title = "A silicon nanowire with a Coulomb blockade effect at room temperature",

abstract = "An extremely narrow and thin silicon wire has been fabricated on a silicon-on-insulator wafer (see Figure). The room-temperature Coulomb blockade effects as well as the influence of a capacitively coupled gate on the transport properties of this conducting silicon quantum wire are studied. The results obtained are encouraging for the application of such wires in single-electron transistors.",

author = "Hu, {S. F.} and Wong, {W. Z.} and Liu, {S. S.} and Wu, {Y. C.} and Sung, {C. L.} and Huang, {T. Y.} and Yang, {T. J.}",

year = "2002",

month = may,

day = "17",

doi = "10.1002/1521-4095(20020517)14:10<736::AID-ADMA736>3.0.CO;2-9",

language = "English",

volume = "14",

pages = "736--739",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-VCH Verlag",

number = "10",

}

TY - JOUR

T1 - A silicon nanowire with a Coulomb blockade effect at room temperature

AU - Hu, S. F.

AU - Wong, W. Z.

AU - Liu, S. S.

AU - Wu, Y. C.

AU - Sung, C. L.

AU - Huang, T. Y.

AU - Yang, T. J.

PY - 2002/5/17

Y1 - 2002/5/17

N2 - An extremely narrow and thin silicon wire has been fabricated on a silicon-on-insulator wafer (see Figure). The room-temperature Coulomb blockade effects as well as the influence of a capacitively coupled gate on the transport properties of this conducting silicon quantum wire are studied. The results obtained are encouraging for the application of such wires in single-electron transistors.

AB - An extremely narrow and thin silicon wire has been fabricated on a silicon-on-insulator wafer (see Figure). The room-temperature Coulomb blockade effects as well as the influence of a capacitively coupled gate on the transport properties of this conducting silicon quantum wire are studied. The results obtained are encouraging for the application of such wires in single-electron transistors.

UR - http://www.scopus.com/inward/record.url?scp=0037123565&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037123565&partnerID=8YFLogxK

U2 - 10.1002/1521-4095(20020517)14:10<736::AID-ADMA736>3.0.CO;2-9

DO - 10.1002/1521-4095(20020517)14:10<736::AID-ADMA736>3.0.CO;2-9

M3 - Article

AN - SCOPUS:0037123565

SN - 0935-9648

VL - 14

SP - 736

EP - 739

JO - Advanced Materials

JF - Advanced Materials

IS - 10

ER -

A silicon nanowire with a Coulomb blockade effect at room temperature

Abstract

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