A silicon nanowire with a Coulomb blockade effect at room temperature

S. F. Hu, W. Z. Wong, S. S. Liu, Y. C. Wu, C. L. Sung, T. Y. Huang, T. J. Yang

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

An extremely narrow and thin silicon wire has been fabricated on a silicon-on-insulator wafer (see Figure). The room-temperature Coulomb blockade effects as well as the influence of a capacitively coupled gate on the transport properties of this conducting silicon quantum wire are studied. The results obtained are encouraging for the application of such wires in single-electron transistors.

Original languageEnglish
Pages (from-to)736-739
Number of pages4
JournalAdvanced Materials
Volume14
Issue number10
DOIs
Publication statusPublished - 2002 May 17

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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