A silicon nanowire with a Coulomb blockade effect at room temperature

Shu-Fen Hu, W. Z. Wong, S. S. Liu, Y. C. Wu, C. L. Sung, T. Y. Huang, T. J. Yang

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

An extremely narrow and thin silicon wire has been fabricated on a silicon-on-insulator wafer (see Figure). The room-temperature Coulomb blockade effects as well as the influence of a capacitively coupled gate on the transport properties of this conducting silicon quantum wire are studied. The results obtained are encouraging for the application of such wires in single-electron transistors.

Original languageEnglish
JournalAdvanced Materials
Volume14
Issue number10
DOIs
Publication statusPublished - 2002 May 17

Fingerprint

Coulomb blockade
Silicon
Nanowires
Wire
Single electron transistors
Semiconductor quantum wires
Transport properties
Temperature

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

A silicon nanowire with a Coulomb blockade effect at room temperature. / Hu, Shu-Fen; Wong, W. Z.; Liu, S. S.; Wu, Y. C.; Sung, C. L.; Huang, T. Y.; Yang, T. J.

In: Advanced Materials, Vol. 14, No. 10, 17.05.2002.

Research output: Contribution to journalArticle

Hu, Shu-Fen ; Wong, W. Z. ; Liu, S. S. ; Wu, Y. C. ; Sung, C. L. ; Huang, T. Y. ; Yang, T. J. / A silicon nanowire with a Coulomb blockade effect at room temperature. In: Advanced Materials. 2002 ; Vol. 14, No. 10.
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