A p-Type Ferroelectric Field-Effect Transistor Using Ultrathin Hafnium Aluminum Oxide

Chun Hu Cheng*, Chien Liu, Yi Chun Tung, Hsuan Han Chen, Ruo Yin Liao, Wu Ching Chou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Herein, the electrical characteristics of a p-type negative-capacitance field-effect transistor are investigated using an ultrathin 2.5 nm-thick HfAlOx. The optimized performance exhibits a steep subthreshold slope of 35 mV dec−1, a negligible hysteresis of 4 mV, and a low off-state current of 3 × 10−13A μm−1. Appropriate aluminum doping into HfAlOx film can not only improve the leakage current but also stabilize the negative-capacitance matching. The prominent improvement on the capacitance matching and ferroelectricity can be ascribed to the reduced defect traps and less dielectric crystalline phase during annealing, which is important for the practical application of energy-efficient logic devices.

Original languageEnglish
Article number2000356
JournalPhysica Status Solidi - Rapid Research Letters
Issue number12
Publication statusPublished - 2020 Dec


  • capacitance matching
  • doping
  • ferroelectrics
  • hafnium oxide
  • transistors

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics


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