A p-Type Ferroelectric Field-Effect Transistor Using Ultrathin Hafnium Aluminum Oxide

Chun Hu Cheng, Chien Liu, Yi Chun Tung, Hsuan Han Chen, Ruo Yin Liao, Wu Ching Chou

Research output: Contribution to journalArticlepeer-review

Abstract

Herein, the electrical characteristics of a p-type negative-capacitance field-effect transistor are investigated using an ultrathin 2.5 nm-thick HfAlOx. The optimized performance exhibits a steep subthreshold slope of 35 mV dec−1, a negligible hysteresis of 4 mV, and a low off-state current of 3 × 10−13A μm−1. Appropriate aluminum doping into HfAlOx film can not only improve the leakage current but also stabilize the negative-capacitance matching. The prominent improvement on the capacitance matching and ferroelectricity can be ascribed to the reduced defect traps and less dielectric crystalline phase during annealing, which is important for the practical application of energy-efficient logic devices.

Original languageEnglish
Article number2000356
JournalPhysica Status Solidi - Rapid Research Letters
Volume14
Issue number12
DOIs
Publication statusPublished - 2020 Dec

Keywords

  • capacitance matching
  • doping
  • ferroelectrics
  • hafnium oxide
  • transistors

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'A p-Type Ferroelectric Field-Effect Transistor Using Ultrathin Hafnium Aluminum Oxide'. Together they form a unique fingerprint.

Cite this