A novel 30-90-GHz singly balanced mixer with broadband LO/IF

Yi Ching Wu; Chau Ching Chiong; Jeng Han Tsai; Huei Wang

doi:10.1109/TMTT.2016.2622708

A novel 30-90-GHz singly balanced mixer with broadband LO/IF

Yi Ching Wu^*, Chau Ching Chiong, Jeng Han Tsai, Huei Wang

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

An innovative mixer architecture using gate- and drain-pumped with combining drain terminals of nMOS transistors is proposed to enhance IF and local oscillator (LO) operation bandwidths in 90-nm CMOS for astronomical application. With 0.6 mW of dc power, this mixer achieved peak conversion gains of -6.2, -6.1, -8.6, and -7.2 dB at LO frequencies of 30, 50, 60, and 90 GHz, respectively. At an LO power of 2.3 dBm and an LO frequency of 30 GHz, the IF 3-dB bandwidth is 26 GHz. When the LO power is 4.2 dBm at an LO frequency of 90 GHz, the mixer has an IF 3-dB bandwidth of 16 GHz. The IP_1dB (input 1-dB gain compression) is better than 2 dBm from 30 to 90 GHz. The chip occupies an area of 0.389 mm². Compared with other published works, this mixer demonstrates a breakthrough for extremely wide IF and LO bandwidths in low dc power consumption with high IP_1dB.

Original language	English
Article number	7748541
Pages (from-to)	4611-4623
Number of pages	13
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	64
Issue number	12
DOIs	https://doi.org/10.1109/TMTT.2016.2622708
Publication status	Published - 2016 Dec

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

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@article{6f69b5c56758494c9b49f891a5be2cc5,

title = "A novel 30-90-GHz singly balanced mixer with broadband LO/IF",

abstract = "An innovative mixer architecture using gate- and drain-pumped with combining drain terminals of nMOS transistors is proposed to enhance IF and local oscillator (LO) operation bandwidths in 90-nm CMOS for astronomical application. With 0.6 mW of dc power, this mixer achieved peak conversion gains of -6.2, -6.1, -8.6, and -7.2 dB at LO frequencies of 30, 50, 60, and 90 GHz, respectively. At an LO power of 2.3 dBm and an LO frequency of 30 GHz, the IF 3-dB bandwidth is 26 GHz. When the LO power is 4.2 dBm at an LO frequency of 90 GHz, the mixer has an IF 3-dB bandwidth of 16 GHz. The IP1dB (input 1-dB gain compression) is better than 2 dBm from 30 to 90 GHz. The chip occupies an area of 0.389 mm2. Compared with other published works, this mixer demonstrates a breakthrough for extremely wide IF and LO bandwidths in low dc power consumption with high IP1dB.",

author = "Wu, {Yi Ching} and Chiong, {Chau Ching} and Tsai, {Jeng Han} and Huei Wang",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2016",

month = dec,

doi = "10.1109/TMTT.2016.2622708",

language = "English",

volume = "64",

pages = "4611--4623",

journal = "IEEE Transactions on Microwave Theory and Techniques",

issn = "0018-9480",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - A novel 30-90-GHz singly balanced mixer with broadband LO/IF

AU - Wu, Yi Ching

AU - Chiong, Chau Ching

AU - Tsai, Jeng Han

AU - Wang, Huei

PY - 2016/12

Y1 - 2016/12

N2 - An innovative mixer architecture using gate- and drain-pumped with combining drain terminals of nMOS transistors is proposed to enhance IF and local oscillator (LO) operation bandwidths in 90-nm CMOS for astronomical application. With 0.6 mW of dc power, this mixer achieved peak conversion gains of -6.2, -6.1, -8.6, and -7.2 dB at LO frequencies of 30, 50, 60, and 90 GHz, respectively. At an LO power of 2.3 dBm and an LO frequency of 30 GHz, the IF 3-dB bandwidth is 26 GHz. When the LO power is 4.2 dBm at an LO frequency of 90 GHz, the mixer has an IF 3-dB bandwidth of 16 GHz. The IP1dB (input 1-dB gain compression) is better than 2 dBm from 30 to 90 GHz. The chip occupies an area of 0.389 mm2. Compared with other published works, this mixer demonstrates a breakthrough for extremely wide IF and LO bandwidths in low dc power consumption with high IP1dB.

AB - An innovative mixer architecture using gate- and drain-pumped with combining drain terminals of nMOS transistors is proposed to enhance IF and local oscillator (LO) operation bandwidths in 90-nm CMOS for astronomical application. With 0.6 mW of dc power, this mixer achieved peak conversion gains of -6.2, -6.1, -8.6, and -7.2 dB at LO frequencies of 30, 50, 60, and 90 GHz, respectively. At an LO power of 2.3 dBm and an LO frequency of 30 GHz, the IF 3-dB bandwidth is 26 GHz. When the LO power is 4.2 dBm at an LO frequency of 90 GHz, the mixer has an IF 3-dB bandwidth of 16 GHz. The IP1dB (input 1-dB gain compression) is better than 2 dBm from 30 to 90 GHz. The chip occupies an area of 0.389 mm2. Compared with other published works, this mixer demonstrates a breakthrough for extremely wide IF and LO bandwidths in low dc power consumption with high IP1dB.

UR - http://www.scopus.com/inward/record.url?scp=84996921102&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84996921102&partnerID=8YFLogxK

U2 - 10.1109/TMTT.2016.2622708

DO - 10.1109/TMTT.2016.2622708

M3 - Article

AN - SCOPUS:84996921102

SN - 0018-9480

VL - 64

SP - 4611

EP - 4623

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

IS - 12

M1 - 7748541

ER -

A novel 30-90-GHz singly balanced mixer with broadband LO/IF

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