A miniature Q-band low noise amplifier using 0.13-μm CMOS technology

Jeng Han Tsai; Wei Chien Chen; To Po Wang; Tian Wei Huang; Huei Wang

doi:10.1109/LMWC.2006.875628

A miniature Q-band low noise amplifier using 0.13-μm CMOS technology

Jeng Han Tsai^*, Wei Chien Chen, To Po Wang, Tian Wei Huang, Huei Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

53 Citations (Scopus)

Abstract

A miniature Q-band low noise amplifier (LNA) using 0.13-μm standard mixed signal/radio frequency complementary metal-oxide-semiconductor (CMOS) technology is presented in this letter. This three-stage common source thin-film microstrip LNA achieves a peak gain of 20 dB at 43 GHz with a compact chip size of 0.525 mm ². The 3-dB frequency bandwidth ranges from 34 to 44 GHz and the minimum noise figure is 6.3 dB at 41 GHz. The LNA outperforms all the reported commercial standard CMOS Q-band LNAs, with the highest gain, highest output IP3, and smallest chip size.

Original language	English
Article number	1637484
Pages (from-to)	327-329
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	16
Issue number	6
DOIs	https://doi.org/10.1109/LMWC.2006.875628
Publication status	Published - 2006 Jun
Externally published	Yes

Keywords

Complementary metal-oxide-semiconductor (CMOS)
Low noise amplifier (LNA)
Millimeter-wave (MMW)
Thin-film microstrip (TFMS)

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/LMWC.2006.875628

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title = "A miniature Q-band low noise amplifier using 0.13-μm CMOS technology",

abstract = "A miniature Q-band low noise amplifier (LNA) using 0.13-μm standard mixed signal/radio frequency complementary metal-oxide-semiconductor (CMOS) technology is presented in this letter. This three-stage common source thin-film microstrip LNA achieves a peak gain of 20 dB at 43 GHz with a compact chip size of 0.525 mm 2. The 3-dB frequency bandwidth ranges from 34 to 44 GHz and the minimum noise figure is 6.3 dB at 41 GHz. The LNA outperforms all the reported commercial standard CMOS Q-band LNAs, with the highest gain, highest output IP3, and smallest chip size.",

keywords = "Complementary metal-oxide-semiconductor (CMOS), Low noise amplifier (LNA), Millimeter-wave (MMW), Thin-film microstrip (TFMS)",

author = "Tsai, {Jeng Han} and Chen, {Wei Chien} and Wang, {To Po} and Huang, {Tian Wei} and Huei Wang",

note = "Funding Information: Manuscript received November 25, 2005; revised February 21, 2006. This work was supported by the National Science Council of Taiwan under Grants NSC 93-2752-E-002-001-PAE and NSC 94-2219-E-002-011, and by TSMC Semiconductors Corporation through the Chip Implementation Center (CIC), Taiwan, R.O.C.",

year = "2006",

month = jun,

doi = "10.1109/LMWC.2006.875628",

language = "English",

volume = "16",

pages = "327--329",

journal = "IEEE Microwave and Wireless Components Letters",

issn = "1531-1309",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - A miniature Q-band low noise amplifier using 0.13-μm CMOS technology

AU - Tsai, Jeng Han

AU - Chen, Wei Chien

AU - Wang, To Po

AU - Huang, Tian Wei

AU - Wang, Huei

N1 - Funding Information: Manuscript received November 25, 2005; revised February 21, 2006. This work was supported by the National Science Council of Taiwan under Grants NSC 93-2752-E-002-001-PAE and NSC 94-2219-E-002-011, and by TSMC Semiconductors Corporation through the Chip Implementation Center (CIC), Taiwan, R.O.C.

PY - 2006/6

Y1 - 2006/6

N2 - A miniature Q-band low noise amplifier (LNA) using 0.13-μm standard mixed signal/radio frequency complementary metal-oxide-semiconductor (CMOS) technology is presented in this letter. This three-stage common source thin-film microstrip LNA achieves a peak gain of 20 dB at 43 GHz with a compact chip size of 0.525 mm 2. The 3-dB frequency bandwidth ranges from 34 to 44 GHz and the minimum noise figure is 6.3 dB at 41 GHz. The LNA outperforms all the reported commercial standard CMOS Q-band LNAs, with the highest gain, highest output IP3, and smallest chip size.

AB - A miniature Q-band low noise amplifier (LNA) using 0.13-μm standard mixed signal/radio frequency complementary metal-oxide-semiconductor (CMOS) technology is presented in this letter. This three-stage common source thin-film microstrip LNA achieves a peak gain of 20 dB at 43 GHz with a compact chip size of 0.525 mm 2. The 3-dB frequency bandwidth ranges from 34 to 44 GHz and the minimum noise figure is 6.3 dB at 41 GHz. The LNA outperforms all the reported commercial standard CMOS Q-band LNAs, with the highest gain, highest output IP3, and smallest chip size.

KW - Complementary metal-oxide-semiconductor (CMOS)

KW - Low noise amplifier (LNA)

KW - Millimeter-wave (MMW)

KW - Thin-film microstrip (TFMS)

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A miniature Q-band low noise amplifier using 0.13-μm CMOS technology

Abstract

Keywords

ASJC Scopus subject areas

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