A miniature Q-band low noise amplifier using 0.13-μm CMOS technology

Jeng-Han Tsai, Wei Chien Chen, To Po Wang, Tian Wei Huang, Huei Wang

Research output: Contribution to journalArticle

51 Citations (Scopus)

Abstract

A miniature Q-band low noise amplifier (LNA) using 0.13-μm standard mixed signal/radio frequency complementary metal-oxide-semiconductor (CMOS) technology is presented in this letter. This three-stage common source thin-film microstrip LNA achieves a peak gain of 20 dB at 43 GHz with a compact chip size of 0.525 mm 2. The 3-dB frequency bandwidth ranges from 34 to 44 GHz and the minimum noise figure is 6.3 dB at 41 GHz. The LNA outperforms all the reported commercial standard CMOS Q-band LNAs, with the highest gain, highest output IP3, and smallest chip size.

Original languageEnglish
Article number1637484
Pages (from-to)327-329
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume16
Issue number6
DOIs
Publication statusPublished - 2006 Jun 1

Keywords

  • Complementary metal-oxide-semiconductor (CMOS)
  • Low noise amplifier (LNA)
  • Millimeter-wave (MMW)
  • Thin-film microstrip (TFMS)

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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