A miniature Q-band low noise amplifier (LNA) using 0.13-μm standard mixed signal/radio frequency complementary metal-oxide-semiconductor (CMOS) technology is presented in this letter. This three-stage common source thin-film microstrip LNA achieves a peak gain of 20 dB at 43 GHz with a compact chip size of 0.525 mm 2. The 3-dB frequency bandwidth ranges from 34 to 44 GHz and the minimum noise figure is 6.3 dB at 41 GHz. The LNA outperforms all the reported commercial standard CMOS Q-band LNAs, with the highest gain, highest output IP3, and smallest chip size.
- Complementary metal-oxide-semiconductor (CMOS)
- Low noise amplifier (LNA)
- Millimeter-wave (MMW)
- Thin-film microstrip (TFMS)
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering