A mid-infrared tunable filter in a semiconductordielectric photonic crystal containing doped semiconductor defect

Hui Chuan Hung, Chien-Jang Wu, Shoou Jinn Chang

    Research output: Contribution to journalArticle

    11 Citations (Scopus)

    Abstract

    In this work, we theoretically analyze tunable filtering properties in a semiconductordielectric photonic crystal (SDPC) containing doped semiconductor defect in the mid-infrared frequency region. We consider two possible configurations of filter structures, the symmetric and asymmetric ones. With a defect of the doped n-type semiconductor, n-Si, the resonant transmission peak can be tuned by varying the doping concentration, that is, the peak wavelength will be shifted to the position of lower wavelength for both structures. Additionally, by increasing the defect thickness, it is also possible to have a filter with multiple resonant peaks, leading to a multichannel filter. The results provide another type of tunable filter in the defective SDPC that could be of technical use for semiconductor applications in optical electronics.

    Original languageEnglish
    Pages (from-to)1677-1680
    Number of pages4
    JournalSolid State Communications
    Volume151
    Issue number22
    DOIs
    Publication statusPublished - 2011 Nov 1

    Fingerprint

    tunable filters
    Crystal defects
    Photonic crystals
    doped crystals
    photonics
    Semiconductor materials
    Infrared radiation
    filters
    Wavelength
    Defects
    defects
    n-type semiconductors
    Electronic equipment
    Doping (additives)
    wavelengths
    configurations
    electronics
    crystals

    Keywords

    • A. Photonic crystals
    • A. Semiconductors
    • D. Wave properties

    ASJC Scopus subject areas

    • Chemistry(all)
    • Condensed Matter Physics
    • Materials Chemistry

    Cite this

    A mid-infrared tunable filter in a semiconductordielectric photonic crystal containing doped semiconductor defect. / Hung, Hui Chuan; Wu, Chien-Jang; Chang, Shoou Jinn.

    In: Solid State Communications, Vol. 151, No. 22, 01.11.2011, p. 1677-1680.

    Research output: Contribution to journalArticle

    @article{153aca55320e415b81753fe910553c23,
    title = "A mid-infrared tunable filter in a semiconductordielectric photonic crystal containing doped semiconductor defect",
    abstract = "In this work, we theoretically analyze tunable filtering properties in a semiconductordielectric photonic crystal (SDPC) containing doped semiconductor defect in the mid-infrared frequency region. We consider two possible configurations of filter structures, the symmetric and asymmetric ones. With a defect of the doped n-type semiconductor, n-Si, the resonant transmission peak can be tuned by varying the doping concentration, that is, the peak wavelength will be shifted to the position of lower wavelength for both structures. Additionally, by increasing the defect thickness, it is also possible to have a filter with multiple resonant peaks, leading to a multichannel filter. The results provide another type of tunable filter in the defective SDPC that could be of technical use for semiconductor applications in optical electronics.",
    keywords = "A. Photonic crystals, A. Semiconductors, D. Wave properties",
    author = "Hung, {Hui Chuan} and Chien-Jang Wu and Chang, {Shoou Jinn}",
    year = "2011",
    month = "11",
    day = "1",
    doi = "10.1016/j.ssc.2011.08.005",
    language = "English",
    volume = "151",
    pages = "1677--1680",
    journal = "Solid State Communications",
    issn = "0038-1098",
    publisher = "Elsevier Limited",
    number = "22",

    }

    TY - JOUR

    T1 - A mid-infrared tunable filter in a semiconductordielectric photonic crystal containing doped semiconductor defect

    AU - Hung, Hui Chuan

    AU - Wu, Chien-Jang

    AU - Chang, Shoou Jinn

    PY - 2011/11/1

    Y1 - 2011/11/1

    N2 - In this work, we theoretically analyze tunable filtering properties in a semiconductordielectric photonic crystal (SDPC) containing doped semiconductor defect in the mid-infrared frequency region. We consider two possible configurations of filter structures, the symmetric and asymmetric ones. With a defect of the doped n-type semiconductor, n-Si, the resonant transmission peak can be tuned by varying the doping concentration, that is, the peak wavelength will be shifted to the position of lower wavelength for both structures. Additionally, by increasing the defect thickness, it is also possible to have a filter with multiple resonant peaks, leading to a multichannel filter. The results provide another type of tunable filter in the defective SDPC that could be of technical use for semiconductor applications in optical electronics.

    AB - In this work, we theoretically analyze tunable filtering properties in a semiconductordielectric photonic crystal (SDPC) containing doped semiconductor defect in the mid-infrared frequency region. We consider two possible configurations of filter structures, the symmetric and asymmetric ones. With a defect of the doped n-type semiconductor, n-Si, the resonant transmission peak can be tuned by varying the doping concentration, that is, the peak wavelength will be shifted to the position of lower wavelength for both structures. Additionally, by increasing the defect thickness, it is also possible to have a filter with multiple resonant peaks, leading to a multichannel filter. The results provide another type of tunable filter in the defective SDPC that could be of technical use for semiconductor applications in optical electronics.

    KW - A. Photonic crystals

    KW - A. Semiconductors

    KW - D. Wave properties

    UR - http://www.scopus.com/inward/record.url?scp=80053575929&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=80053575929&partnerID=8YFLogxK

    U2 - 10.1016/j.ssc.2011.08.005

    DO - 10.1016/j.ssc.2011.08.005

    M3 - Article

    AN - SCOPUS:80053575929

    VL - 151

    SP - 1677

    EP - 1680

    JO - Solid State Communications

    JF - Solid State Communications

    SN - 0038-1098

    IS - 22

    ER -