A low operating voltage IGZO TFT using LaLuO3 gate dielectric

Kun I. Chou; Hsiao Hsuan Hsu; Chun Hu Cheng; Kai Yu Lee; Shang Rong Li; Albert Chin

doi:10.1109/EDSSC.2013.6628219

A low operating voltage IGZO TFT using LaLuO₃ gate dielectric

Kun I. Chou
, Hsiao Hsuan Hsu
, Chun Hu Cheng
, Kai Yu Lee
, Shang Rong Li
, Albert Chin

Department of Mechatronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

This study proposes a low operation voltage indium-gallium-zinc oxide (IGZO) thin-film transistor using a high-K lanthanum-lutetium oxide as the gate dielectric. It is the first time to integrate the high-K LaLuO₃ into an IGZO TFT. The resulting LaLuO₃/IGZO TFT shows a low threshold voltage of 0.32 V, a small sub-threshold swing of 310 mV/decade and an acceptable mobility (μ_FE) of 6.6 cm²/V-s. The low V_T and small SS allow device operation voltage below 2.5 V.

Original language	English
Title of host publication	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
DOIs	https://doi.org/10.1109/EDSSC.2013.6628219
Publication status	Published - 2013
Event	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong, Hong Kong Duration: 2013 Jun 3 → 2013 Jun 5

Publication series

Name	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

Other

Other	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
Country/Territory	Hong Kong
City	Hong Kong
Period	2013/06/03 → 2013/06/05

Keywords

InGaZnO
LaLuO
thin film transistor (TFT)

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/EDSSC.2013.6628219

Cite this

Chou, K. I., Hsu, H. H., Cheng, C. H., Lee, K. Y., Li, S. R., & Chin, A. (2013). A low operating voltage IGZO TFT using LaLuO₃ gate dielectric. In 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 Article 6628219 (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013). https://doi.org/10.1109/EDSSC.2013.6628219

A low operating voltage IGZO TFT using LaLuO₃ gate dielectric. / Chou, Kun I.; Hsu, Hsiao Hsuan; Cheng, Chun Hu et al.
2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 2013. 6628219 (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chou, KI, Hsu, HH, Cheng, CH, Lee, KY, Li, SR & Chin, A 2013, A low operating voltage IGZO TFT using LaLuO₃ gate dielectric. in 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013., 6628219, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, Hong Kong, Hong Kong, 2013/06/03. https://doi.org/10.1109/EDSSC.2013.6628219

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title = "A low operating voltage IGZO TFT using LaLuO3 gate dielectric",

abstract = "This study proposes a low operation voltage indium-gallium-zinc oxide (IGZO) thin-film transistor using a high-K lanthanum-lutetium oxide as the gate dielectric. It is the first time to integrate the high-K LaLuO3 into an IGZO TFT. The resulting LaLuO3/IGZO TFT shows a low threshold voltage of 0.32 V, a small sub-threshold swing of 310 mV/decade and an acceptable mobility (μFE) of 6.6 cm2/V-s. The low VT and small SS allow device operation voltage below 2.5 V.",

keywords = "InGaZnO, LaLuO, thin film transistor (TFT)",

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AB - This study proposes a low operation voltage indium-gallium-zinc oxide (IGZO) thin-film transistor using a high-K lanthanum-lutetium oxide as the gate dielectric. It is the first time to integrate the high-K LaLuO3 into an IGZO TFT. The resulting LaLuO3/IGZO TFT shows a low threshold voltage of 0.32 V, a small sub-threshold swing of 310 mV/decade and an acceptable mobility (μFE) of 6.6 cm2/V-s. The low VT and small SS allow device operation voltage below 2.5 V.

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KW - LaLuO

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