@inproceedings{163321142f224bb090f1bdecadbf70b3,
title = "A low operating voltage IGZO TFT using LaLuO3 gate dielectric",
abstract = "This study proposes a low operation voltage indium-gallium-zinc oxide (IGZO) thin-film transistor using a high-K lanthanum-lutetium oxide as the gate dielectric. It is the first time to integrate the high-K LaLuO3 into an IGZO TFT. The resulting LaLuO3/IGZO TFT shows a low threshold voltage of 0.32 V, a small sub-threshold swing of 310 mV/decade and an acceptable mobility (μFE) of 6.6 cm2/V-s. The low VT and small SS allow device operation voltage below 2.5 V.",
keywords = "InGaZnO, LaLuO, thin film transistor (TFT)",
author = "Chou, {Kun I.} and Hsu, {Hsiao Hsuan} and Cheng, {Chun Hu} and Lee, {Kai Yu} and Li, {Shang Rong} and Albert Chin",
year = "2013",
doi = "10.1109/EDSSC.2013.6628219",
language = "English",
isbn = "9781467325233",
series = "2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013",
booktitle = "2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013",
note = "2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 ; Conference date: 03-06-2013 Through 05-06-2013",
}