A low operating voltage IGZO TFT using LaLuO3 gate dielectric

Kun I. Chou, Hsiao Hsuan Hsu, Chun-Hu Cheng, Kai Yu Lee, Shang Rong Li, Albert Chin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This study proposes a low operation voltage indium-gallium-zinc oxide (IGZO) thin-film transistor using a high-K lanthanum-lutetium oxide as the gate dielectric. It is the first time to integrate the high-K LaLuO3 into an IGZO TFT. The resulting LaLuO3/IGZO TFT shows a low threshold voltage of 0.32 V, a small sub-threshold swing of 310 mV/decade and an acceptable mobility (μFE) of 6.6 cm2/V-s. The low VT and small SS allow device operation voltage below 2.5 V.

Original languageEnglish
Title of host publication2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
DOIs
Publication statusPublished - 2013 Dec 23
Event2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong, Hong Kong
Duration: 2013 Jun 32013 Jun 5

Publication series

Name2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

Other

Other2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
CountryHong Kong
CityHong Kong
Period13/6/313/6/5

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Keywords

  • InGaZnO
  • LaLuO
  • thin film transistor (TFT)

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Chou, K. I., Hsu, H. H., Cheng, C-H., Lee, K. Y., Li, S. R., & Chin, A. (2013). A low operating voltage IGZO TFT using LaLuO3 gate dielectric. In 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 [6628219] (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013). https://doi.org/10.1109/EDSSC.2013.6628219