A low operating voltage IGZO TFT using LaLuO3 gate dielectric

Kun I. Chou, Hsiao Hsuan Hsu, Chun-Hu Cheng, Kai Yu Lee, Shang Rong Li, Albert Chin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This study proposes a low operation voltage indium-gallium-zinc oxide (IGZO) thin-film transistor using a high-K lanthanum-lutetium oxide as the gate dielectric. It is the first time to integrate the high-K LaLuO3 into an IGZO TFT. The resulting LaLuO3/IGZO TFT shows a low threshold voltage of 0.32 V, a small sub-threshold swing of 310 mV/decade and an acceptable mobility (μFE) of 6.6 cm2/V-s. The low VT and small SS allow device operation voltage below 2.5 V.

Original languageEnglish
Title of host publication2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
DOIs
Publication statusPublished - 2013 Dec 23
Event2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong, Hong Kong
Duration: 2013 Jun 32013 Jun 5

Publication series

Name2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

Other

Other2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
CountryHong Kong
CityHong Kong
Period13/6/313/6/5

Fingerprint

Gate dielectrics
Gallium
Zinc oxide
Indium
Electric potential
Lutetium
Lanthanum
Thin film transistors
Threshold voltage
Oxide films
Oxides

Keywords

  • InGaZnO
  • LaLuO
  • thin film transistor (TFT)

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Chou, K. I., Hsu, H. H., Cheng, C-H., Lee, K. Y., Li, S. R., & Chin, A. (2013). A low operating voltage IGZO TFT using LaLuO3 gate dielectric. In 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 [6628219] (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013). https://doi.org/10.1109/EDSSC.2013.6628219

A low operating voltage IGZO TFT using LaLuO3 gate dielectric. / Chou, Kun I.; Hsu, Hsiao Hsuan; Cheng, Chun-Hu; Lee, Kai Yu; Li, Shang Rong; Chin, Albert.

2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 2013. 6628219 (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chou, KI, Hsu, HH, Cheng, C-H, Lee, KY, Li, SR & Chin, A 2013, A low operating voltage IGZO TFT using LaLuO3 gate dielectric. in 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013., 6628219, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, Hong Kong, Hong Kong, 13/6/3. https://doi.org/10.1109/EDSSC.2013.6628219
Chou KI, Hsu HH, Cheng C-H, Lee KY, Li SR, Chin A. A low operating voltage IGZO TFT using LaLuO3 gate dielectric. In 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 2013. 6628219. (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013). https://doi.org/10.1109/EDSSC.2013.6628219
Chou, Kun I. ; Hsu, Hsiao Hsuan ; Cheng, Chun-Hu ; Lee, Kai Yu ; Li, Shang Rong ; Chin, Albert. / A low operating voltage IGZO TFT using LaLuO3 gate dielectric. 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 2013. (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013).
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AB - This study proposes a low operation voltage indium-gallium-zinc oxide (IGZO) thin-film transistor using a high-K lanthanum-lutetium oxide as the gate dielectric. It is the first time to integrate the high-K LaLuO3 into an IGZO TFT. The resulting LaLuO3/IGZO TFT shows a low threshold voltage of 0.32 V, a small sub-threshold swing of 310 mV/decade and an acceptable mobility (μFE) of 6.6 cm2/V-s. The low VT and small SS allow device operation voltage below 2.5 V.

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