A Ku-band 3-bit phase shifter MMIC using GaAs phemt technology for phased array system

Jeng Han Tsai; Yin Ting Kuo; Hao Chun Yu

doi:10.1002/mop.28948

A Ku-band 3-bit phase shifter MMIC using GaAs phemt technology for phased array system

Jeng Han Tsai^*
, Yin Ting Kuo
, Hao Chun Yu

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A Ku-band 3-bit switch-type phase shifter with low insertion loss, low magnitude variation, and low rms phase error is designed and fabricated on 0.15-μm pHEMT process. For all eight states, the insertion loss is 6.5±1.5 dB from 10-14 GHz and the input return loss is >8.5 dB over 10-14 GHz. The phase shifter achieves a rms phase error of 2.2° and a rms amplitude error of 0.37 dB at 12 GHz with total chip size of 1.5 ×1 mm².

Original language	English
Pages (from-to)	771-774
Number of pages	4
Journal	Microwave and Optical Technology Letters
Volume	57
Issue number	4
DOIs	https://doi.org/10.1002/mop.28948
Publication status	Published - 2015 Apr 1

Keywords

Ku-band
monolithic microwave integrated circuit
phase shifter
phased array system

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1002/mop.28948

Cite this

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title = "A Ku-band 3-bit phase shifter MMIC using GaAs phemt technology for phased array system",

abstract = "A Ku-band 3-bit switch-type phase shifter with low insertion loss, low magnitude variation, and low rms phase error is designed and fabricated on 0.15-μm pHEMT process. For all eight states, the insertion loss is 6.5±1.5 dB from 10-14 GHz and the input return loss is >8.5 dB over 10-14 GHz. The phase shifter achieves a rms phase error of 2.2° and a rms amplitude error of 0.37 dB at 12 GHz with total chip size of 1.5 ×1 mm2.",

keywords = "Ku-band, monolithic microwave integrated circuit, phase shifter, phased array system",

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AU - Tsai, Jeng Han

AU - Kuo, Yin Ting

AU - Yu, Hao Chun

PY - 2015/4/1

Y1 - 2015/4/1

N2 - A Ku-band 3-bit switch-type phase shifter with low insertion loss, low magnitude variation, and low rms phase error is designed and fabricated on 0.15-μm pHEMT process. For all eight states, the insertion loss is 6.5±1.5 dB from 10-14 GHz and the input return loss is >8.5 dB over 10-14 GHz. The phase shifter achieves a rms phase error of 2.2° and a rms amplitude error of 0.37 dB at 12 GHz with total chip size of 1.5 ×1 mm2.

AB - A Ku-band 3-bit switch-type phase shifter with low insertion loss, low magnitude variation, and low rms phase error is designed and fabricated on 0.15-μm pHEMT process. For all eight states, the insertion loss is 6.5±1.5 dB from 10-14 GHz and the input return loss is >8.5 dB over 10-14 GHz. The phase shifter achieves a rms phase error of 2.2° and a rms amplitude error of 0.37 dB at 12 GHz with total chip size of 1.5 ×1 mm2.

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KW - monolithic microwave integrated circuit

KW - phase shifter

KW - phased array system

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JF - Microwave and Optical Technology Letters

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ER -

A Ku-band 3-bit phase shifter MMIC using GaAs phemt technology for phased array system

Abstract

Keywords

ASJC Scopus subject areas

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