A Ku-band 3-bit phase shifter MMIC using GaAs phemt technology for phased array system

Jeng-Han Tsai, Yin Ting Kuo, Hao Chun Yu

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A Ku-band 3-bit switch-type phase shifter with low insertion loss, low magnitude variation, and low rms phase error is designed and fabricated on 0.15-μm pHEMT process. For all eight states, the insertion loss is 6.5±1.5 dB from 10-14 GHz and the input return loss is >8.5 dB over 10-14 GHz. The phase shifter achieves a rms phase error of 2.2° and a rms amplitude error of 0.37 dB at 12 GHz with total chip size of 1.5 ×1 mm2.

Original languageEnglish
Pages (from-to)771-774
Number of pages4
JournalMicrowave and Optical Technology Letters
Volume57
Issue number4
DOIs
Publication statusPublished - 2015 Apr 1

Fingerprint

phase error
Phase shifters
Monolithic microwave integrated circuits
phased arrays
insertion loss
Insertion losses
switches
chips
Switches
gallium arsenide

Keywords

  • Ku-band
  • monolithic microwave integrated circuit
  • phase shifter
  • phased array system

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

A Ku-band 3-bit phase shifter MMIC using GaAs phemt technology for phased array system. / Tsai, Jeng-Han; Kuo, Yin Ting; Yu, Hao Chun.

In: Microwave and Optical Technology Letters, Vol. 57, No. 4, 01.04.2015, p. 771-774.

Research output: Contribution to journalArticle

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