A K-band low phase noise and low power CMOS voltage-controlled oscillator

Jeng Han Tsai; Yu Zhe Lin; Yin Ting Kuo

doi:10.1002/mop.30313

A K-band low phase noise and low power CMOS voltage-controlled oscillator

Jeng Han Tsai^*, Yu Zhe Lin, Yin Ting Kuo

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A K-band differential cross-coupled inductance- capacitance (LC) voltage-controlled oscillator (VCO) is implemented in 0.18-μm CMOS process. To accomplish high quality (Q) factor LC-tank at K-band, a slab inductor with high Q is adopted. The VCO can be tuned from 23.1 to 23.38 GHz and the core dc power consumption is 11.33 mW from 1 V power supply. The phase noise is −109.04 dBc/Hz at 1 MHz offset, and the calculated figure of merit (FoM) is −185.79 dBc/Hz. At low supply voltage mode of 0.65 V, the phase noise is −106.015 dBc/Hz at 1 MHz offset and the FoM is −189.76 dBc/Hz.

Original language	English
Pages (from-to)	362-366
Number of pages	5
Journal	Microwave and Optical Technology Letters
Volume	59
Issue number	2
DOIs	https://doi.org/10.1002/mop.30313
Publication status	Published - 2017 Feb 1

Keywords

CMOS
K-band
voltage-controlled oscillator

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1002/mop.30313

Cite this

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abstract = "A K-band differential cross-coupled inductance- capacitance (LC) voltage-controlled oscillator (VCO) is implemented in 0.18-μm CMOS process. To accomplish high quality (Q) factor LC-tank at K-band, a slab inductor with high Q is adopted. The VCO can be tuned from 23.1 to 23.38 GHz and the core dc power consumption is 11.33 mW from 1 V power supply. The phase noise is −109.04 dBc/Hz at 1 MHz offset, and the calculated figure of merit (FoM) is −185.79 dBc/Hz. At low supply voltage mode of 0.65 V, the phase noise is −106.015 dBc/Hz at 1 MHz offset and the FoM is −189.76 dBc/Hz.",

keywords = "CMOS, K-band, voltage-controlled oscillator",

author = "Tsai, {Jeng Han} and Lin, {Yu Zhe} and Kuo, {Yin Ting}",

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T1 - A K-band low phase noise and low power CMOS voltage-controlled oscillator

AU - Tsai, Jeng Han

AU - Lin, Yu Zhe

AU - Kuo, Yin Ting

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Y1 - 2017/2/1

N2 - A K-band differential cross-coupled inductance- capacitance (LC) voltage-controlled oscillator (VCO) is implemented in 0.18-μm CMOS process. To accomplish high quality (Q) factor LC-tank at K-band, a slab inductor with high Q is adopted. The VCO can be tuned from 23.1 to 23.38 GHz and the core dc power consumption is 11.33 mW from 1 V power supply. The phase noise is −109.04 dBc/Hz at 1 MHz offset, and the calculated figure of merit (FoM) is −185.79 dBc/Hz. At low supply voltage mode of 0.65 V, the phase noise is −106.015 dBc/Hz at 1 MHz offset and the FoM is −189.76 dBc/Hz.

AB - A K-band differential cross-coupled inductance- capacitance (LC) voltage-controlled oscillator (VCO) is implemented in 0.18-μm CMOS process. To accomplish high quality (Q) factor LC-tank at K-band, a slab inductor with high Q is adopted. The VCO can be tuned from 23.1 to 23.38 GHz and the core dc power consumption is 11.33 mW from 1 V power supply. The phase noise is −109.04 dBc/Hz at 1 MHz offset, and the calculated figure of merit (FoM) is −185.79 dBc/Hz. At low supply voltage mode of 0.65 V, the phase noise is −106.015 dBc/Hz at 1 MHz offset and the FoM is −189.76 dBc/Hz.

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KW - K-band

KW - voltage-controlled oscillator

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A K-band low phase noise and low power CMOS voltage-controlled oscillator

Abstract

Keywords

ASJC Scopus subject areas

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