A high uniformity, high yield 0.15 μm pHEMT technology manufactured by KrF 248 nm stepper

INIS

• power 100%
• yields 100%
• control 50%
• performance 50%
• comparative evaluations 50%
• production 50%
• gain 50%
• applications 50%
• devices 50%
• cost 50%
• output 50%
• efficiency 50%
• optimization 50%
• ghz range 50%
• integrated circuits 50%
• microwave radiation 50%
• electron beams 50%

Engineering

• Yields 100%
• Production 50%
• Applications 50%
• Device Performance 50%
• 5G 50%
• Output Power 50%
• Power Added Efficiency 50%
• Monolithic Microwave Integrated Circuits 50%
• Optimization 50%
• Throughput 50%

Physics

• Technology 100%
• Performance 50%
• Optimization 50%
• Microwave 50%
• Output 50%
• Integrated Circuit 50%