A high uniformity, high yield 0.15 μm pHEMT technology manufactured by KrF 248 nm stepper

Chao Min Chang; Pei Chin Chiu; Jeng Han Tsai; Hui Hsin Sun; Yun Yue Hsieh; Zhi Jie Zeng; Kun Lin Lu; Chih Peng Lin; Bo Chin Wang; Sheng Chun Wang; Chin Fu Lin

A high uniformity, high yield 0.15 μm pHEMT technology manufactured by KrF 248 nm stepper

Chao Min Chang
, Pei Chin Chiu
, Jeng Han Tsai^*
, Hui Hsin Sun
, Yun Yue Hsieh
, Zhi Jie Zeng
, Kun Lin Lu
, Chih Peng Lin
, Bo Chin Wang
, Sheng Chun Wang
, Chin Fu Lin

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

In this paper, we report a 0.15 μm pHEMT process whose gate is defined by DUV stepper. Compared with traditionally used e-beam writer, this technology features high throughput and low cost which is suitable for production of commercial MMICs (Monolithic microwave integrated circuit), especially for future 5G mm-Wave applications. After process optimization, excellent device performances such as, P_out (output power) of 553 mW/mm, Gain of 11 dB and PAE (power added efficiency) of 50% were achieved at 30 GHz. A consistent CP (chip probing) yield > 98% was achieved with a very tight control of gate process at Wavetech.

Original language	English
Publication status	Published - 2019
Event	2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 - Minneapolis, United States Duration: 2019 Apr 29 → 2019 May 2

Conference

Conference	2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019
Country/Territory	United States
City	Minneapolis
Period	2019/04/29 → 2019/05/02

Keywords

0.15μm
DUV volume production
Yield

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Cite this

Chang, C. M., Chiu, P. C., Tsai, J. H., Sun, H. H., Hsieh, Y. Y., Zeng, Z. J., Lu, K. L., Lin, C. P., Wang, B. C., Wang, S. C., & Lin, C. F. (2019). A high uniformity, high yield 0.15 μm pHEMT technology manufactured by KrF 248 nm stepper. Paper presented at 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019, Minneapolis, United States.

Chang, CM, Chiu, PC, Tsai, JH, Sun, HH, Hsieh, YY, Zeng, ZJ, Lu, KL, Lin, CP, Wang, BC, Wang, SC & Lin, CF 2019, 'A high uniformity, high yield 0.15 μm pHEMT technology manufactured by KrF 248 nm stepper', Paper presented at 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019, Minneapolis, United States, 2019/04/29 - 2019/05/02.

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title = "A high uniformity, high yield 0.15 μm pHEMT technology manufactured by KrF 248 nm stepper",

abstract = "In this paper, we report a 0.15 μm pHEMT process whose gate is defined by DUV stepper. Compared with traditionally used e-beam writer, this technology features high throughput and low cost which is suitable for production of commercial MMICs (Monolithic microwave integrated circuit), especially for future 5G mm-Wave applications. After process optimization, excellent device performances such as, Pout (output power) of 553 mW/mm, Gain of 11 dB and PAE (power added efficiency) of 50\% were achieved at 30 GHz. A consistent CP (chip probing) yield > 98\% was achieved with a very tight control of gate process at Wavetech.",

keywords = "0.15μm, DUV volume production, Yield",

author = "Chang, \{Chao Min\} and Chiu, \{Pei Chin\} and Tsai, \{Jeng Han\} and Sun, \{Hui Hsin\} and Hsieh, \{Yun Yue\} and Zeng, \{Zhi Jie\} and Lu, \{Kun Lin\} and Lin, \{Chih Peng\} and Wang, \{Bo Chin\} and Wang, \{Sheng Chun\} and Lin, \{Chin Fu\}",

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year = "2019",

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TY - CONF

T1 - A high uniformity, high yield 0.15 μm pHEMT technology manufactured by KrF 248 nm stepper

AU - Chang, Chao Min

AU - Chiu, Pei Chin

AU - Tsai, Jeng Han

AU - Sun, Hui Hsin

AU - Hsieh, Yun Yue

AU - Zeng, Zhi Jie

AU - Lu, Kun Lin

AU - Lin, Chih Peng

AU - Wang, Bo Chin

AU - Wang, Sheng Chun

AU - Lin, Chin Fu

PY - 2019

Y1 - 2019

N2 - In this paper, we report a 0.15 μm pHEMT process whose gate is defined by DUV stepper. Compared with traditionally used e-beam writer, this technology features high throughput and low cost which is suitable for production of commercial MMICs (Monolithic microwave integrated circuit), especially for future 5G mm-Wave applications. After process optimization, excellent device performances such as, Pout (output power) of 553 mW/mm, Gain of 11 dB and PAE (power added efficiency) of 50% were achieved at 30 GHz. A consistent CP (chip probing) yield > 98% was achieved with a very tight control of gate process at Wavetech.

AB - In this paper, we report a 0.15 μm pHEMT process whose gate is defined by DUV stepper. Compared with traditionally used e-beam writer, this technology features high throughput and low cost which is suitable for production of commercial MMICs (Monolithic microwave integrated circuit), especially for future 5G mm-Wave applications. After process optimization, excellent device performances such as, Pout (output power) of 553 mW/mm, Gain of 11 dB and PAE (power added efficiency) of 50% were achieved at 30 GHz. A consistent CP (chip probing) yield > 98% was achieved with a very tight control of gate process at Wavetech.

KW - 0.15μm

KW - DUV volume production

KW - Yield

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UR - https://www.scopus.com/pages/publications/85066989299#tab=citedBy

M3 - Paper

AN - SCOPUS:85066989299

T2 - 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019

Y2 - 29 April 2019 through 2 May 2019

ER -

A high uniformity, high yield 0.15 μm pHEMT technology manufactured by KrF 248 nm stepper

Abstract

Conference

Keywords

ASJC Scopus subject areas

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