Abstract
In this paper, we report a 0.15 μm pHEMT process whose gate is defined by DUV stepper. Compared with traditionally used e-beam writer, this technology features high throughput and low cost which is suitable for production of commercial MMICs (Monolithic microwave integrated circuit), especially for future 5G mm-Wave applications. After process optimization, excellent device performances such as, Pout (output power) of 553 mW/mm, Gain of 11 dB and PAE (power added efficiency) of 50% were achieved at 30 GHz. A consistent CP (chip probing) yield > 98% was achieved with a very tight control of gate process at Wavetech.
Original language | English |
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Publication status | Published - 2019 |
Event | 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 - Minneapolis, United States Duration: 2019 Apr 29 → 2019 May 2 |
Conference
Conference | 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 |
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Country/Territory | United States |
City | Minneapolis |
Period | 2019/04/29 → 2019/05/02 |
Keywords
- 0.15μm
- DUV volume production
- Yield
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering