A high uniformity, high yield 0.15 μm pHEMT technology manufactured by KrF 248 nm stepper

Chao Min Chang, Pei Chin Chiu, Jeng Han Tsai*, Hui Hsin Sun, Yun Yue Hsieh, Zhi Jie Zeng, Kun Lin Lu, Chih Peng Lin, Bo Chin Wang, Sheng Chun Wang, Chin Fu Lin

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

In this paper, we report a 0.15 μm pHEMT process whose gate is defined by DUV stepper. Compared with traditionally used e-beam writer, this technology features high throughput and low cost which is suitable for production of commercial MMICs (Monolithic microwave integrated circuit), especially for future 5G mm-Wave applications. After process optimization, excellent device performances such as, Pout (output power) of 553 mW/mm, Gain of 11 dB and PAE (power added efficiency) of 50% were achieved at 30 GHz. A consistent CP (chip probing) yield > 98% was achieved with a very tight control of gate process at Wavetech.

Original languageEnglish
Publication statusPublished - 2019
Event2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 - Minneapolis, United States
Duration: 2019 Apr 292019 May 2

Conference

Conference2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019
Country/TerritoryUnited States
CityMinneapolis
Period2019/04/292019/05/02

Keywords

  • 0.15μm
  • DUV volume production
  • Yield

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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